Papers by Author: Shinzo Yoshikado

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Authors: Yuki Hongo, Kenji Sakai, Yuuki Sato, Shinzo Yoshikado
Abstract: A low-cost composite electromagnetic wave absorber made of sendust dispersed in resin was developed that does not contain any rare metals. In this study, spherical sendust particles with average particle sizes of approximately 5 and 20 μm were dispersed in polystyrene resin at volume ratios in the range 2040 vol% to broaden the absorption frequency bandwidth at frequencies above 10 GHz. The optimal volume ratios of sendust with average particle sizes of approximately 5 and 20 μm were found to be approximately 30 and 35 vol%, respectively. Electromagnetic wave absorbers can be flexibly designed by controlling the volume ratio of spherical sendust particles in resin.
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Authors: Hiroki Kusunoki, Takatoshi Kondo, Kiyohiro Hiraki, Kazushi Takada, Shinzo Yoshikado
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Authors: Kenji Sakai, Yang Guan, Yuuki Sato, Shinzo Yoshikado
Abstract: To design an electromagnetic wave absorber with good absorption properties at frequencies above 1 GHz, the frequency dependences of the relative complex permeability μr*, the relative complex permittivity εr*, and return loss were investigated for the composite made of both sendust (an alloy of Al 5%, Si 10%, and Fe 85%) and aluminum particles dispersed in polystyrene resin. It was found that the frequency dependence of μr* for this composite can be changed by adjusting the particle size of aluminum and the volume mixture ratio of sendust and aluminum. Therefore, a flexible design of an absorber with good absorption characteristics was proposed based on the ability to control μr*. The composite made of both sendust and aluminum was found to exhibit a return loss of less than −20 dB in the frequency range of not only several GHz but also around 20 GHz if appropriate volume mixture ratio and particle size were selected.
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Authors: Kenji Sakai, Yang Guan, Yuuki Sato, Shinzo Yoshikado
Abstract: In order to design a ferrite absorber that can be used at frequencies of several GHz, the frequency dependences of the relative complex permeability μr*, the relative complex permittivity εr*, and return loss were investigated for a composite made of Ni-Zn ferrite and SiO2. When ferrite particles were dispersed and isolated in an SiO2 medium, the frequency dependence of μr* was different from that for a composite made of SiO2 particles dispersed and isolated in the ferrite medium. Moreover, when ferrite particles were isolated and a suitable mixture ratio of ferrite and SiO2 was selected, the return loss was less than −20 dB at frequencies of several GHz. The dispersion states of ferrite and SiO2 particles are thus important factors to design an absorber, and improvement in the absorption characteristics of the ferrite tile which is used as a practical absorber could be achieved using a composite made of Ni-Zn ferrite particles dispersed and isolated in an SiO2 medium.
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Authors: Kenji Sakai, Yoichi Wada, Shinzo Yoshikado
Abstract: Composite electromagnetic wave absorbers made of a soft magnetic material (permalloy or sendust) and polystyrene resin were investigated [1]. The volume mixture ratio of magnetic material was varied in the range from 18 vol% to 75 vol%. The composites with the low volume mixture ratio of soft magnetic material absorbed more than 99 % of electromagnetic wave power in the frequency range from 1 GHz to 10 GHz. The values of the real part r’ of the relative complex permeability r * for both magnetic materials were less than unity at frequencies above approximately 6 GHz as the volume mixture ratio of magnetic material increased. This result suggests the possible realization of an electromagnetic wave absorber that can operate above 10 GHz.
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Authors: Masayuki Takada, Shinzo Yoshikado
Abstract: The effects of the thermally annealing of Bi-Mn-Co-Sb2O3-added ZnO varistors on their electrical degradation were investigated. For the samples with 0.01mol% Sb2O3added and without Sb2O3, no marked difference in the non linearity index of the voltage-current (V-I) characteristics was observed upon electrical degradation for the annealed and nonannealed samples. Upon increasing the amount of Sb2O3 added, the values of  increased after electrical degradation for the annealed samples. Moreover, the value of  after electrical degradation was proportional to the full width at half maximum (FWHM) of the X-ray diffraction peak for Zn2.33Sb0.67O4-type spinel particles under various annealing conditions. The added Sb2O3 did not dissolve in the ZnO grains but became segregated at grain boundaries. Therefore, it is speculated that the increase in the FWHM for the spinel particles is due to the increase in the numbers of fine spinel particles at grain boundaries and triple points.
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Authors: Ai Fukumori, Masayuki Takada, Yuji Akiyama, Yuuki Sato, Shinzo Yoshikado
Abstract: With the goal of fabricating low-breakdown-voltage varistors, the effect of adding Ba to ZnO varistors on the ZnO grain size was investigated. Grain growth of ZnO could be markedly promoted by adding both Ba and Bi. The maximum grain size was approximately 150 μm and the minimum varistor voltage was approximately 12 V/mm. However, it had relatively poor tolerance characteristics for electrical degradation. It is speculated that when adding both Ba and Bi to a Mn–Co-added ZnO varistor, it is necessary to form the molten phases of Ba and Bi to promote grain growth of ZnO. It is also conjectured that the growth of ZnO grains is not promoted when Ba and Bi do not coexist in the molten phase because Ba forms compounds with Mn independently with the addition of small amounts of Bi.
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Authors: Hiroyuki Yoshino, Masayuki Takada, Jyunya Morioka, Shinzo Yoshikado
Abstract: The effects of Mn and Co addition on the electrical degradation of ZnO varistors were investigated on the basis of voltage-current (V-I) characteristics, X-ray diffraction (XRD), capacitance-voltage (C-V) characteristics, and isothermal capacitance transient spectroscopy (ICTS). The optimum Co content for preventing electrical degradation was determined to be approximately 0.5mol% in Bi-Mn(0.5mol%)-Co(0~1.0mol%)-added ZnO varistors. Correlations between the improvement of electrical degradation and the structural changes of additives were investigated by XRD. It is suggested that the crystal structure of a-Bi2O3 at the grain boundary changes to a different structure, such as d-Bi2O3 or Bi7.65Zn0.35O11.38 with a fluorite-type structure, at the optimum Co content. It is speculated that the structural change of Bi2O3 at the grain boundary contributes to the improvement of electrical degradation characteristics. Three trap levels were detected in all Bi-Mn-Co-added samples by ICTS. These trap levels showed a local maximum at the optimum Co content.
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