Papers by Author: Shu Xia Lin

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Authors: Jian Hong Gong, Shu Xia Lin, Jun Gao
Abstract: Boride inclusions in the synthetic diamond single crystals grown from Fe-Ni-C-B system under high temperature and high pressure were studied in the present paper. Both chemical composition and structure of the inclusions incorporated into the diamond during the process of diamond growth were successfully determined by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). It was found that the inclusions related to boron trapped in the diamond consisted of f.c.c. (FeNi)23(CB)6, (FeNi)3(CB), Fe2B, FeB, hexagonal Ni3B, and B4C.
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Authors: Jian Hong Gong, Shu Xia Lin, Jun Gao
Abstract: In the present paper, boron-doped diamond was synthesized by static pressure method using Fe-Ni-C-B system catalyst, whose resistance-temperature characteristic curve was studied. Experiments results proved that the boron-doped diamond has different ionization energy in different temperature interval and the reasons were analyzed. The maximum operating temperature is about 773K for such boron-doped diamond. The research provides experimental basis for high-temperature semiconductor diamond.
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