Papers by Author: Stephan G. Müller

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Authors: Joseph J. Sumakeris, Mrinal K. Das, H. McD. Hobgood, Stephan G. Müller, Michael J. Paisley, Seo Young Ha, Marek Skowronski, John W. Palmour, Calvin H. Carter Jr.
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Authors: Jason R. Jenny, D.P. Malta, M.R. Calus, Stephan G. Müller, Adrian R. Powell, Valeri F. Tsvetkov, H. McD. Hobgood, R.C. Glass, Calvin H. Carter Jr.
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Authors: Stephan G. Müller, Robert Eckstein, R.F.P. Grimbergen, Dieter Hofmann, B. Rexer
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Authors: Stephan G. Müller, Robert Eckstein, J. Fricke, Dieter Hofmann, R. Hofmann, R. Horn, H. Mehling, O. Nilsson
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Authors: Stephan G. Müller, J. Fricke, Dieter Hofmann, R. Horn, O. Nilsson, B. Rexer
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Authors: Thomas L. Straubinger, Matthias Bickermann, M. Grau, Dieter Hofmann, L. Kadinski, Stephan G. Müller, M. Selder, Peter J. Wellmann, Albrecht Winnacker
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Authors: Stephan G. Müller, M.F. Brady, W.H. Brixius, G. Fechko, R.C. Glass, D. Henshall, H. McD. Hobgood, Jason R. Jenny, R.T. Leonard, D.P. Malta, Adrian R. Powell, Valeri F. Tsvetkov, S.T. Allen, John W. Palmour, Calvin H. Carter Jr.
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Authors: Albert A. Burk, Michael J. O'Loughlin, Michael J. Paisley, Adrian R. Powell, M.F. Brady, Stephan G. Müller, S.T. Allen
Abstract: Experimental results are presented for SiC epitaxial layer growths employing a largearea, 7x3-inch, warm-wall planetary SiC-VPE reactor. This high-throughput reactor has been optimized for the growth of uniform 0.01 to 30-micron thick, specular, device-quality SiC epitaxial layers with background doping concentrations of <1x1014 cm-3. Multi-layer device profiles such as Schottky, MESFETs, SITs, and BJTs with n-type doping from ~1x1015 cm-3 to >1x1019 cm-3, p-type doping from ~3x1015 cm-3 to >1x1020 cm-3, and abrupt doping transitions (~1 decade/nm) are regularly grown in continuous growth runs. Intrawafer layer thickness and n-type doping uniformities of <1% and <5% s/mean have been achieved. Within a run, wafer-to-wafer thickness and doping variation are ~±1% and ~±5% respectively. Long term run-to-run variations while under process control are approximately ~3% s/mean for thickness and ~5% s/mean for doping. Latest results from an even larger 6x4-inch (100-mm) reactor are also presented.
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Authors: Adrian R. Powell, R.T. Leonard, M.F. Brady, Stephan G. Müller, Valeri F. Tsvetkov, R. Trussell, Joseph J. Sumakeris, H. McD. Hobgood, Albert A. Burk, R.C. Glass, Calvin H. Carter Jr.
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Authors: Calvin H. Carter Jr., R.C. Glass, M.F. Brady, D.P. Malta, D. Henshall, Stephan G. Müller, Valeri F. Tsvetkov, H. McD. Hobgood, Adrian R. Powell
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