Papers by Author: Suk Kyoung Hong

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Authors: J.H. Choi, H.S. Yoo, K.W. Cho, N.K. Kim, S.H. Oh, E.S. Choi, S.J. Yeom, H.J. Sun, S.S. Lee, K.N. Lee, Suk Kyoung Hong, Tae Whan Hong, Il Ho Kim, Sung Lim Ryu, Soon Young Kweon

Abstract: A 16Mb 1-transistor /1-capacitor (1T1C) FeRAM device was fabricated with lead-free Bi3.25La0.75Ti3.0O12 (BLT) capacitors. The key...

530
Authors: Myoung Sub Kim, Jin Hyung Jun, Jin Ho Oh, Hyeong Joon Kim, Jae Sung Roh, Suk Kyoung Hong, Doo Jin Choi

Abstract: Ge2Sb2Te5 (GST) has been widely studied for PRAM as reversible phase change material. GST is expected to reduce RESET (crystalline →...

21
Authors: K.W. Cho, N.K. Kim, S.H. Oh, E.S. Choi, H.J. Sun, S.J. Yeom, K.N. Lee, Seoung Soo Lee, Suk Kyoung Hong, S.K. Choi, Tae Whan Hong, Il Ho Kim, J.I. Lee, Soon Chul Ur, Young Geun Lee, Sung Lim Ryu, Soon Young Kweon

Abstract: Ferroelectric properties of Pb-free (Bi,La)4Ti3O12 (BLT) films were optimized on a newly developed MTP cell structure. BLT films were coated...

285
Authors: B.I. Seo, No Jin Park, Sung Jin Kim, B. Yang, Y.H. Oh, Suk Kyoung Hong

Abstract: Issues of ferroelectric high-density memories (>64Mb) indispensable for upcoming ubiquitous era have been on the cell integration less than...

1857
Authors: B. Yang, No Jin Park, Sung Jin Kim, Suk Kyoung Hong

Abstract: Issues of ferroelectric high-density memories (>64Mb) indispensable for upcoming ubiquitous era have been on the cell integration less than...

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