Papers by Author: Sunao Sadamatsu

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Authors: Kenji Higashida, Masaki Tanaka, Sunao Sadamatsu
Abstract: Three-dimensional structure of crack tip dislocations were investigated by combining scanning transmission electron microscopy (STEM) and electron tomography (ET) in silicon single crystals. P-type (001) silicon single crystals were employed. <110> cracks were introduced from an indent on the (001) surface. The specimen was heated at 873K in order to introduce dislocations at the crack tips. The specimen was thinned to include the crack tip in the foil by an iron milling machine. STEM-ET observation revealed the three-dimensional structure of crack tip dislocations. Their Burgers vectors were determined by using an invisibility criterion. The local stress intensity factor was calculated using the dislocation characters obtained in the observation in this study, indicating that the dislocations observed were mode II shielding type dislocations.
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Authors: Sunao Sadamatsu, Masaki Tanaka, Kenji Higashida, Kenji Kaneko, Masatoshi Mitsuhara, S. Hata, M. Honda
Abstract: Crack tip dislocations and dislocations introduced by three point-bending tests at high temperature are observed by combinating scanning transmission electron microscopy and computed tomography (STEM-CT). Commercially available P type (001) single crystal silicon wafers were employed. A series of STEM image was acquired from -60º to +60º in tilt range with 2º in tilt step. The diffraction vector was maintained close to g(hkl) = 220 during the acquisition by adjusting the [110] direction of the sample parallel to the tilt axis of the holder. Reconstructed images of dislocations revealed dislocation structures in three-dimension.
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