Papers by Author: Sung Ki Park

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Authors: Gyu Hyun Kim, Sung Hyuk Cho, Ji Hye Han, Young Bang Lee, Chi Hyeong Roh, Kwon Hong, Sung Ki Park
Abstract: In this paper, we studied stiction behavior of HAR pattern (line and space pattern) dependence on adhesion force with surface tension of drying liquid and surface contact angle. Surface tension effect was evaluated with various drying liquids such as IPA, ethanol and HFE (hydrofluoroether) chemical. Patterns treated by dHF, APM and surface modifier were introduced to investigate dependence of pattern collapse on contact angle. The high temperature D.I. water rinse followed by high temperatures drying using liquid with low surface tension was a most effective. Furthermore, surface modification method using HMDS (hexamethyldisilazane) chemical was also effective.
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Authors: Seung Cheol Lee, Choon Kun Ryu, Sang Wook Park, Gyu An Jin, Sang Deok Kim, Ki Hong Yang, Sang Hyon Kwak, Su Hyun Lim, Young Jun Kim, Sun Mi Park, Chul Sik Jang, Sung Ki Park
Abstract: The SC-1 treatment prior to the O3/TEOS CVD was a very effective method for gapfilling the nanoscale trench of the high aspect ratio by improving the adsorption of TEOS precursors onto the wall oxide. It was found that the interval duration after the SC-1 cleaning was a critical parameter for the contact angle and the gapfill performance of the O3/TEOS CVD.
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Authors: Gyu Hyun Kim, Soon Young Park, Seung Seok Pyo, Ji Hye Han, Jung Nam Kim, Kee Joon Oh, Choon Kun Ryu, Yong Soo Choi, Noh Jung Kwak, Sung Ki Park
Abstract: As a design rule of memory devices is scaled down to sub-100 nm, shallow trench isolation (STI) technology is faced with gap-filling problem in case of CVD oxide and O3-TEOS oxide processes. To overcome the gap-filling problem, a perhydropolysilazane (PHPS) based spin-on dielectric (SOD) has been implemented for nanoscale devices because of self-planarization and excellent gap-filling property [1]. However, the stability of the SOD has been concerned about because it has relatively softer and more porous than conventional HDP oxide. In this paper, we report the effect of wet oxidant treatment on the stability of the SOD for STI gap-filling.
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