Papers by Author: Sylvain Monnoye

Paper TitlePage

Authors: F. Fossard, J. Brault, N. Gogneau, Eva Monroy, F. Enjalbert, Le Si Dang, E. Bellet-Amalric, Sylvain Monnoye, Hugues Mank, B. Daudin
1577
Authors: N. Gogneau, F. Fossard, Eva Monroy, Sylvain Monnoye, Hugues Mank, B. Daudin
1557
Authors: Eva Monroy, E. Sarigiannidou, F. Fossard, E. Enjalbert, N. Gogneau, E. Bellet-Amalric, J. Brault, J.-L. Rouvière, Le Si Dang, Sylvain Monnoye, Hugues Mank, B. Daudin
1573
Authors: F. Fossard, N. Gogneau, Eva Monroy, Le Si Dang, Sylvain Monnoye, Hugues Mank, B. Daudin
1593
Authors: Marcin Zielinski, Catherine Moisson, Sylvain Monnoye, Hugues Mank, Thierry Chassagne, Sebastien Roy, Anne Elisabeth Bazin, Jean François Michaud, Marc Portail
Abstract: In this contribution we recapitulate the state of the art of silicon carbide and related materials polishing. Since the demonstration (by Vicente et al) of an ultimate preparation of Si-face -SiC wafers some important progresses were made in the field of surface preparation of silicon carbide and related materials. This concerns the industrial, high output treatments of substrates of increasing size, as well as the research studies of the feasibility of new preparation approaches for wide band gap materials. We also discuss the problems related to the polishing of the polycrystalline material and to the planarization of epilayers.
753
Authors: Marcin Zielinski, Sylvain Monnoye, Hugues Mank, Catherine Moisson, Thierry Chassagne, Adrien Michon, Marc Portail
Abstract: First objective of present contribution is to supply a compact description of two thickness-dependent characteristics of state of the art as-grown 3C-SiC/Si templates: structural quality and surface morphology. Second objective is to point out the benefits of surface planarization and indicate the temperature limits of thermal treatment that can be applied to polished 3C-SiC/Si templates without deterioration of planarization results. We believe that this kind of overview, based on our long term experience in fabrication of 3C-SiC/Si templates, may be useful for the scientific community working on future applications of cubic silicon carbide polytype.
306
Showing 1 to 6 of 6 Paper Titles