Papers by Author: Taizoh Sadoh

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Authors: Taizoh Sadoh, M. Watanabe, H. Nakashima, T. Tsurushima
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Authors: H. Nakashima, Taizoh Sadoh, H. Kitagawa, K. Hashimoto
761
Authors: Y. Murakami, H. Yamauchi, Taizoh Sadoh, A. Kenjo, Masanobu Miyao
341
Authors: Taizoh Sadoh, H. Kamizuru, A. Kenjo, Masanobu Miyao
1181
Authors: I. Tsunoda, T. Nagata, Taizoh Sadoh, A. Kenjo, Masanobu Miyao
345
Authors: H. Nakashima, Taizoh Sadoh, T. Tsurushima
1191
Authors: H. Nakashima, Taizoh Sadoh, T. Tsurushima
1351
Authors: Taizoh Sadoh, Kaoru Toko, Masashi Kurosawa, Takanori Tanaka, Takashi Sakane, Yasuharu Ohta, Naoyuki Kawabata, Hiroyuki Yokoyama, Masanobu Miyao
Abstract: We have investigated the Si-seeding rapid-melting process and demonstrated the formation of giant Ge stripes with (100), (110), and (111) orientations on Si (100), (110), and (111) substrates, respectively, covered with SiO2 films. We revealed that crystallization is triggered by Si-Ge mixing in the seeding regions in this process. Based on this mechanism, we have proposed a novel technique to realize orientation-controlled Ge layers on transparent insulating substrates by using Si artificial micro-seeds with (100) and (111)-orientations. This achieved epitaxial growth of single crystalline (100) and (111)-oriented Ge stripes on quartz substrates. The Ge layers showed a high hole mobility exceeding 1100 cm2/Vs owing to the high crystallinity.
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