Papers by Author: W. Witthuhn

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Authors: G. Pasold, F. Albrecht, Joachim Grillenberger, Ulrike Grossner, C. Hülsen, R. Sielemann, W. Witthuhn
487
Authors: Doris Forkel-Wirth, H. Foettinger, M. Iwatschenko-Borho, S. Malzer, F. Meyer, W. Witthuhn, Herbert Wolf
557
Authors: Doris Forkel-Wirth, N. Achtziger, A. Burchard, J.C. Correia, Manfred Deicher, Joachim Grillenberger, H. Gottschalck, T. Licht, R. Magerle, U. Reislöhner, M. Rüb, M. Toulemonde, W. Witthuhn
963
Authors: Herbert Wolf, S. Deubler, Doris Forkel-Wirth, H. Foettinger, M. Iwatschenko-Borho, F. Meyer, M. Renn, W. Witthuhn, Reinhard Helbig
863
Authors: G. Pasold, N. Achtziger, Joachim Grillenberger, W. Witthuhn
471
Authors: Doris Forkel-Wirth, S. Deubler, U. Reislöhner, K. Spörl, W. Witthuhn, Herbert Wolf
1251
Authors: G. Pasold, F. Albrecht, C. Hülsen, R. Sielemann, W. Witthuhn
Abstract: Silicon carbide (SiC) was investigated for deep band gap states of europium by means of deep level transient spectroscopy (DLTS). The knowledge of the properties of optoelectrically active impurities or defects is essential for a detailed understanding of the energy-transfer process resulting in the observable excitations [1]. SiC-samples of the polytypes 4H as well as 6H are ion-implanted by different europium- isotopes in order to obtain a chemical identification of the characterized energy levels. Here the concentration sensitivity of the DLTS is applied to observe the elemental transmutation of the incorporated radioactive tracer atoms 146Eu (t1/2=4.51 d) and 147Eu (t1/2=24.6 d). DLTS on samples implanted with stable Eu-ions (153Eu) was carried out for comparison and manifestation of the results. From these studies 5 Eu-related deep band gap levels are established: in 4H-SiC two levels at EV+0.86(2) eV and EC−0.47(2) eV, and in 6H-SiC three levels at EV+0.88(2) eV, EC−0.29(2) eV and EC−0.67(2) eV.
659
Authors: N. Achtziger, C. Hülsen, Martin S. Janson, Margareta K. Linnarsson, Bengt Gunnar Svensson, W. Witthuhn
933
Authors: Ulrike Grossner, Joachim Grillenberger, F. Albrecht, G. Pasold, R. Sielemann, Bengt Gunnar Svensson, W. Witthuhn
791
Authors: U. Reislöhner, W. Witthuhn
281
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