Papers by Author: You Zhong Li

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Authors: Tao Li, Chun Lan Zhou, Zhen Gang Liu, Wen Jing Wang, Yang Song, Zhi Hua Gao, Ye Duan, You Zhong Li
Abstract: In this paper, the ghost plating problems of crystalline silicon solar cells is studied in theory and experiment. After laser doping process, a pretreatment process is needed to remove SiO2 in the heavy doping area and keep SiN mask simultaneously by using chemical solution containing HF. Otherwise, the unexpected non-heavy-doping area would be plated with silver, resulting in the ghost plating problems. The mechanism of HF etching SiO2 and SiN is analyzed and the feasibility of selective etching is discussed. By changing the main aspects of affecting the etching rate, the ghost plating of crystalline silicon solar cells is improved.
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Authors: Tao Li, Chun Lan Zhou, Zhen Gang Liu, Wen Jing Wang, Yang Song, Zhi Hua Gao, Ye Duan, You Zhong Li
Abstract: In this paper, the improvement on electrical properties of screen-printed crystalline silicon solar cells by light-induced electroplating of silver is studied. Optical losses are analysed by the introduction of scale factor in the calculation. Electrical losses are mainly from the seed layer electrodes, top layer electrodes, the emitter, the base and the contact resistance between silicon and silver. Light-induced electroplating of silver is able to reduce the total power losses of screen-printed solar cells obviously by denser silver electrode. In experiment, the relative increments of I-V parameters as a function of electroplating time for crystalline silicon solar cells with 60μm, 75μm and 90μm wide seed layer electrodes are measured. After light-induced electroplating process, the cells efficiencies of 16.8%, 17.2% and 17.8% have reached on 60μm, 75μm and 90μm wide gridlines screen-printed solar cells, respectively. The calculated results and experimental data show good agreement. Due to the successful verification by comparing between numerical simulation and experimental data, the simulation results could be used to optimize the two-layer electrode structure and light-induced electroplating process.
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Authors: Tao Li, Chun Lan Zhou, Zhen Gang Liu, Wen Jing Wang, Yang Song, Zhi Hua Gao, Ye Duan, You Zhong Li
Abstract: In this paper, the dark current-voltage characteristics of p-n junction of silicon solar cells are analysed, with different nickel film thicknesses of 200nm, 400nm and 600nm. The formation of nickel silicide is obtained after the thermal annealing process for 1min, 5min and 10min. The dark current-voltage curves obtained by three kinds of annealing temperature as a function of time are achieved in experiment. The improvement of series resistance extracted from the dark current-voltage curve in the upper voltage range is observed. The influence of nickel film thicknesses on dark current-voltage characteristics of silicon solar cells is confirmed.
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