Papers by Author: Yuuki Ishida

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Authors: Kosuke Mizuno, Hitoshi Habuka, Yuuki Ishida, Toshiyuki Ohno
Abstract: The in situ cleaning process of a silicon carbide epitaxial reactor was developed using chlorine trifluoride gas for removing the film-type silicon carbide deposition formed on a susceptor. By adjusting the etching temperature to less than 330 °C, the formed silicon carbide films could be removed without significant damage to the susceptor.
237
Authors: Yuuki Ishida, Mitsuhiro Kushibe, Tetsuo Takahashi, Hajime Okumura, Sadafumi Yoshida
275
Authors: Kazutoshi Kojima, Tetsuo Takahashi, Yuuki Ishida, Satoshi Kuroda, Hajime Okumura, Kazuo Arai
209
Authors: Kun'ichi Miyazawa, K. Ito, Yuuki Ishida
301
Authors: Shi Yang Ji, Kazutoshi Kojima, Yuuki Ishida, Hirotaka Yamaguchi, Shingo Saito, Tomohisa Kato, Hidekazu Tsuchida, Sadafumi Yoshida, Hajime Okumura
Abstract: The defect evolution on 90 μm-thick heavily Al-doped 4H-SiC epilayers with Al doping level higher than 1020 cm-3 was studied by tracing back to initial growth stage to monitor major dislocations and their propagations in each growth stage. Results from X-ray topography and KOH etching demonstrate that all existing dislocations on the surface of 90 μm-thick epilayer can be identified as the defects originating from substrate. In other words, there seems no new dislocation generated after a long-term growth. Nevertheless, a high density of misfit dislocation was found appearing near the substrate/epilayer interface for epilayer with Al doping level of 3.5×1020 cm-3, while misfit dislocation cannot be seen on epilayer with Al doping level of 1.5×1020 cm-3.
151
Authors: Yuichi Tomioka, T. Iida, M. Midorikawa, H. Tukada, K. Yoshimoto, Yasuto Hijikata, Hiroyuki Yaguchi, Masahito Yoshikawa, Yuuki Ishida, Ryouji Kosugi, Sadafumi Yoshida
1029
Authors: Hitoshi Habuka, Yusuke Fukumoto, Kosuke Mizuno, Yuuki Ishida, Toshiyuki Ohno
Abstract: The silicon carbide CVD reactor cleaning process was studied by means of detaching silicon carbide particles, which was formed on the silicon carbide coated carbon susceptor surface during the silicon carbide film deposition. The contact points between the particles and the susceptor surface were etched using chlorine trifluoride gas at temperatures lower than 290 °C for 120 min. During this process, the carbon susceptor covered with the silicon carbide coating film suffered from little damage while achieving cleaning.
125
Authors: Yasunori Tanaka, Naoto Kobayashi, Mitsuru Hasegawa, M. Ogura, Sadafumi Yoshida, Yuuki Ishida, Hajime Okumura, Hisao Tanoue
917
Authors: Tetsuo Takahashi, Yuuki Ishida, Hidekazu Tsuchida, Isaho Kamata, Hajime Okumura, Sadafumi Yoshida, Kazuo Arai
323
Authors: Mitsuhiro Kushibe, Yuuki Ishida, Hajime Okumura, Tetsuo Takahashi, Koh Masahara, Takaya Ohno, Takahito Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai
169
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