Papers by Author: Yuuki Ishida

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Authors: Kosuke Mizuno, Hitoshi Habuka, Yuuki Ishida, Toshiyuki Ohno

Abstract: The in situ cleaning process of a silicon carbide epitaxial reactor was developed using chlorine trifluoride gas for removing the...

237
Authors: Yuuki Ishida, Mitsuhiro Kushibe, Tetsuo Takahashi, Hajime Okumura, Sadafumi Yoshida
275
Authors: Kazutoshi Kojima, Tetsuo Takahashi, Yuuki Ishida, Satoshi Kuroda, Hajime Okumura, Kazuo Arai
209
Authors: Kun'ichi Miyazawa, K. Ito, Yuuki Ishida
301
Authors: Shi Yang Ji, Kazutoshi Kojima, Yuuki Ishida, Hirotaka Yamaguchi, Shingo Saito, Tomohisa Kato, Hidekazu Tsuchida, Sadafumi Yoshida, Hajime Okumura

Abstract: The defect evolution on 90 μm-thick heavily Al-doped 4H-SiC epilayers with Al doping level higher than 1020 cm-3 was...

151
Authors: Yuichi Tomioka, T. Iida, M. Midorikawa, H. Tukada, K. Yoshimoto, Yasuto Hijikata, Hiroyuki Yaguchi, Masahito Yoshikawa, Yuuki Ishida, Ryouji Kosugi, Sadafumi Yoshida
1029
Authors: Hitoshi Habuka, Yusuke Fukumoto, Kosuke Mizuno, Yuuki Ishida, Toshiyuki Ohno

Abstract: The silicon carbide CVD reactor cleaning process was studied by means of detaching silicon carbide particles, which was formed on the...

125
Authors: Yasunori Tanaka, Naoto Kobayashi, Mitsuru Hasegawa, M. Ogura, Sadafumi Yoshida, Yuuki Ishida, Hajime Okumura, Hisao Tanoue
917
Authors: Tetsuo Takahashi, Yuuki Ishida, Hidekazu Tsuchida, Isaho Kamata, Hajime Okumura, Sadafumi Yoshida, Kazuo Arai
323
Authors: Mitsuhiro Kushibe, Yuuki Ishida, Hajime Okumura, Tetsuo Takahashi, Koh Masahara, Takaya Ohno, Takahito Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai
169
Showing 1 to 10 of 48 Paper Titles