Papers by Keyword: 4H-SiC

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Authors: E. Rauls, Z. Hajnal, Peter Deák, Thomas Frauenheim
365
Authors: Guo Sheng Sun, Yong Mei Zhao, Liang Wang, Lei Wang, Wan Shun Zhao, Xing Fang Liu, Gang Ji, Yi Ping Zeng

Abstract: The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or...

147
Authors: Hiroshi Kono, Takuma Suzuki, Kazuto Takao, Masaru Furukawa, Makoto Mizukami, Chiharu Ota, Shinsuke Harada, Junji Senzaki, Kenji Fukuda, Takashi Shinohe

Abstract: 1.2 mm × 1.2 mm and 2.7 mm × 2.7 mm silicon carbide double-implanted metal-oxide-semiconductor field-effect transistors (DIMOSFETs) were...

607
Authors: Lin Dong, Guo Sheng Sun, Jun Yu, Guo Guo Yan, Wan Shun Zhao, Lei Wang, Xin He Zhang, Xi Guang Li, Zhan Guo Wang

Abstract: We present our recent results on of 10 × 100 mm 4H-SiC epitaxy by a warm-wall planetary reactor at a growth rate of 10 μm/h. The epilayers...

239
Authors: Takeo Yamamoto, Jun Kojima, Takeshi Endo, Eiichi Okuno, Toshio Sakakibara, Shoichi Onda

Abstract: 4H-SiC SBDs have been developed by many researchers and commercialized for power application devices in recent years. At present time, the...

939
Authors: Dethard Peters, Thomas Aichinger, Thomas Basler, Wolfgang Bergner, Daniel Kueck, Romain Esteve

Abstract: A detailed analysis of the typical static and dynamic performance of the new developed Infineon 1200V CoolSiCTM MOSFET is shown which is...

489
Authors: Yasunori Tanaka, Koji Yano, Mitsuo Okamoto, Akio Takatsuka, Kazuo Arai, Tsutomu Yatsuo

Abstract: We have succeeded to fabricate SiC buried gate static induction transistors (BGSITs) with the breakdown voltage VBR of 1270 V at the gate...

1071
Authors: Hiroshi Kono, Masaru Furukawa, Keiko Ariyoshi, Takuma Suzuki, Yasunori Tanaka, Takashi Shinohe

Abstract: Silicon carbide double-implanted metal-oxide-semiconductor field-effect transistors (DIMOSFETs) were fabricated on 4H-SiC (000-1) carbon...

935
Authors: Yu Qiang Gao, Hong Yan Zhang, Yan Min Zong, Huan Huan Wang, Jianqiu Guo, Balaji Raghothamachar, Michael Dudley, Xi Jie Wang

Abstract: 150 mm diameter 4H-SiC boules were grown by the physical vapor transport (PVT) method. Synchrotron white beam X-ray topography (SWBXT) was...

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