Papers by Keyword: AlGaAs

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Authors: A. Burchard, Manfred Deicher, Doris Forkel-Wirth, J. Freidinger, T. Kerle, R. Magerle, Wulf Pfeiffer, W. Prost, Peter J. Wellmann, Albrecht Winnacker
987
Authors: Jerzy M. Langer, Ryszard Buczko, A.M. Stoneham
105
Authors: A.Y. Du, Ming Fu Li, T.C. Chong, S.J. Chua
279
Authors: Naoki Hara, Haruyoshi Suehiro, Shigeru Kuroda
1943
Authors: Zhi Young Han, Y.B. Jia, Hermann G. Grimmeiss
1031
Authors: J. Szatkowski, E. Placzek-Popko, K. Sierański, O.P. Hansen
1653
Authors: Ignacio Izpura, Elias Muñoz Merino, Enrique Calleja, F. Garcia
623
Authors: A.V. Gradoboev, V.V. Sednev
Abstract: It is known that the rate of introduction of radiation defects into the Schottky barrier of GaAs and InP diodes depends on the presence of the electric field. The main aim of this research is to study the influence of the built-in electric field at the p-n junction on the resistance of dual AlGaAs heterostructure IR-LEDs under gamma rays irradiation. It is determined that the rate of defects introduction in the presence of built-in electric field or reverse bias at p-n junction is considerably less than the rate of defects introduction into the neutral region without electric field. Then the possible ways of improving the radiation resistance of infrared LEDs are considered.
522
Authors: Keshav N. Shrivastava
Abstract: The Hall resistivity in the layers of AlxGa1-xAs/Al0.32Ga0.68As is found to show plateaus at certain fractions which depend on the effective charge. The Hall resistivity formula ρxy=h/e2 has been modified to ρxy=h/[(1/2) ge2] so that the effective charge of the electron becomes, e*=(1/2) ge. The plateaus occur at the effective charge determined by g = (2j+1)/(2l+1). Some of the plateaus are explained to arise from the g values while some others require the use of Landau levels. The flux quantization is modified to include the effect of spin. When the samples are doped with aluminium, the clusters of Al atoms occur in the GaAs resulting into electron clusters in which the spin is NS with S=1/2 and N=101. The electron clusters form a temperature dependent plateau in the Hall resistivity.
3097
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