Papers by Keyword: Aluminum Ion Implantation

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Authors: Takashi Tsuji, T. Tawara, Ryohei Tanuma, Yoshiyuki Yonezawa, Noriyuki Iwamuro, K. Kosaka, H. Yurimoto, S. Kobayashi, Hirofumi Matsuhata, Kenji Fukuda, Hajime Okumura, Kazuo Arai

Abstract: The authors fabricated pn diodes with Al+ implantation in p-type epitaxial layers, and investigated the influence of the implantation dose...

913
Authors: Masataka Satoh, Shohei Nagata, Tohru Nakamura, Hiroshi Doi, Masami Shibagaki

Abstract: Electrical properties of p+n 4H-SiC(0001) diode formed by Al ion implantation to n-type epitaxial layer have been investigated as a function...

679
Authors: Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Corrado Bongiorno, Mario Saggio, Vito Raineri

Abstract: This paper reports on the electrical activation and structural analysis of Al implanted 4H-SiC. The evolution of the implant damage during...

713
Authors: Tomokatsu Watanabe, Sunao Aya, Ryo Hattori, Masayuki Imaizumi, Tatsuo Oomori

Abstract: Effects of implantation temperature on electrical properties of heavily-Al-doped 4H-SiC layer formed with Al implantation have been...

705
Authors: Shigeru Hirono, Hironori Torii, Tetsuya Tajima, Takao Amazawa, Shigeru Umemura, Tomoyuki Kamata, Yasuo Hirabayashi

Abstract: A high dose impurity doping process for 4H-SiC crystals has been developed using electron cyclotron resonance (ECR) sputtered carbon cap...

725
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