Papers by Keyword: Bipolar Diode

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Authors: Pierre Brosselard, Nicolas Camara, Jawad ul Hassan, Xavier Jordá, Peder Bergman, Josep Montserrat, José Millan

Abstract: An innovative process has been developed by Linköping University to prepare the 4HSiC substrate surface before epitaxial growth. The...

991
Authors: Bharat Krishnan, Joseph Neil Merrett, Galyna Melnychuk, Yaroslav Koshka

Abstract: In this work, the benefits of the low-temperature halo-carbon epitaxial growth at 1300oC to form anodes of 4H-SiC PiN diodes were...

925
Authors: Dethard Peters, Wolfgang Bartsch, Bernd Thomas, R. Sommer

Abstract: The paper compares static and dynamic characteristics of 6.5 kV SiC PiN diodes fabricated with different p-emitters. The version with the...

901
Authors: Gabriel Civrac, Farah Laariedh, Nicolas Thierry-Jebali, Mihai Lazar, Dominique Planson, Pierre Brosselard, Jawad ul Hassan, Anne Henry, Erik Janzén, Bertrand Vergne, Sigo Scharnholz

Abstract: This paper reports the fabrication and electrical characterization of PiN diodes on an on-axis grown epitaxial layer. TCAD simulations have...

969
Authors: Takashi Tsuji, T. Tawara, Ryohei Tanuma, Yoshiyuki Yonezawa, Noriyuki Iwamuro, K. Kosaka, H. Yurimoto, S. Kobayashi, Hirofumi Matsuhata, Kenji Fukuda, Hajime Okumura, Kazuo Arai

Abstract: The authors fabricated pn diodes with Al+ implantation in p-type epitaxial layers, and investigated the influence of the implantation dose...

913
Authors: Michael E. Levinshtein, Pavel A. Ivanov, John W. Palmour, Anant K. Agarwal, Mrinal K. Das

Abstract: We report on specific features of forward voltage degradation of 4H-SiC p-i-n diodes in the pulse mode. It is shown that pulse stresses with...

539
Authors: Wolfgang Bartsch, Heinz Mitlehner, S. Gediga

Abstract: In this contribution we summarize measurements on bipolar high voltage SiC-diodes which were fabricated on 4H-SiC wafers preferentially cut...

889
Authors: Naoya Iwamoto, Shinobu Onoda, Takeshi Ohshima, Kazutoshi Kojima, Atsushi Koizumi, Kazuo Uchida, Shinji Nozaki

Abstract: The effect of electron irradiation on the charge collection efficiency of a 6H-SiC p+n diode has been studied. The diodes were irradiated...

921
Authors: Gil Chung, Mark J. Loboda, Siddarth G. Sundaresan, Ranbir Singh

Abstract: Correlation between carrier lifetime and forward voltage drop in 4H-SiC PiN diodes has been investigated. PiN diodes from the drift layer of...

905
Authors: Takamitsu Kawahara, Naoki Hatta, Kuniaki Yagi, Hidetsugu Uchida, Motoki Kobayashi, Masayuki Abe, Hiroyuki Nagasawa, Bernd Zippelius, Gerhard Pensl

Abstract: The correlation between leakage current and stacking fault (SF) density in p-n diodes fabricated on 3C-SiC homo-epitaxial layer is...

339
Showing 1 to 10 of 25 Paper Titles