Papers by Keyword: Boron-Doped

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Authors: Rui Xue Ding, Yin Tang Yang, Jiu Xu Song
Abstract: To explore a novel sensor to detect the presence of nitrogen dioxide (NO2), we investigate reactivity of boron-doped (B-doped) single-walled (8,0) silicon carbide nanotube (SiCNT) with NO2. Based on density functional theory, the structure and electronic properties of the B-doped SiCNT with and without the adsorption of NO2 molecule have been calculated. Results show that a stable adsorption between the nanotube and the gas molecule is formed and the conductivity of the SiCNT is improved obviously. B-doped SiCNT is expected to be a potential candidate for detecting the presence of NO2.
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Authors: Hao Liu, Wei Jia Zhang, Shi Liang Jia, Wei Guo, Jin Wu
Abstract: Boron-doped nanocrystalline silicon film was prepared through plasma enhanced chemical vapor deposition (PECVD) on silicon substrate and glass substrate under the high deposition pressure (332.5-399Pa) and the high deposition temperature (320-360°C). The film was investigated by Raman, electron probe microanalyser, conductivity and mobility experimenting techniques. The conductivity of the boron-doped nanocrystalline silicon film was 2.97×102Ω-1cm-1. The results showed that the interface between the film and the silicon substrate might have quantum spot and small size effect, causing the increasing of conductivity.
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