Papers by Keyword: Boron Acceptor

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Authors: Norbert Schulze, Donovan L. Barrett, Michael Weidner, Gerhard Pensl
Authors: Thanos Tsirimpis, Michael Krieger, Heiko B. Weber, Gerhard Pensl

Abstract: Boron (B) ions were implanted into 4H-SiC. In order to avoid the out-diffusion of B ions during the subsequent annealing process, two...

Authors: Thomas Frank, T. Troffer, Gerhard Pensl, Nils Nordell, S. Karlsson, Adolf Schöner
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