Papers by Keyword: Boron Acceptor

Paper TitlePage

Authors: Norbert Schulze, Donovan L. Barrett, Michael Weidner, Gerhard Pensl
111
Authors: Thanos Tsirimpis, Michael Krieger, Heiko B. Weber, Gerhard Pensl

Abstract: Boron (B) ions were implanted into 4H-SiC. In order to avoid the out-diffusion of B ions during the subsequent annealing process, two...

697
Authors: Thomas Frank, T. Troffer, Gerhard Pensl, Nils Nordell, S. Karlsson, Adolf Schöner
681
Showing 1 to 4 of 4 Paper Titles