Papers by Keyword: Carrier Lifetime

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Authors: Lin Cheng, Anant K. Agarwal, Craig Capell, Michael J. O'Loughlin, Khiem Lam, Jon Zhang, Jim Richmond, Al Burk, John W. Palmour, Aderinto Ogunniyi, Heather O’Brien, Charles Scozzie
Abstract: In this paper, we report our recently developed 1 cm2, 15 kV SiC p-GTO with an extremely low differential on-resistance (RON,diff) of 4.08 mΩ•cm2 at a high injection-current density (JAK) of 600 ~ 710 A/cm2. The 15 kV SiC p-GTO was built on a 120 μm, 2×1014/cm3 doped p-type SiC drift layer with a device active area of 0.521 cm2. Forward conduction of the 15 kV SiC p-GTO was characterized at 20°C and 200°C. Over this temperature range, the RON,diff at JAK of 600 ~ 710 A/cm2 decreased from 4.08 mΩ•cm2 at 20°C to 3.45 mΩ•cm2 at JAK of 600 ~ 680 A/cm2 at 200°C. The gate to cathode blocking voltage (VGK) was measured using a customized high-voltage test set-up. The leakage current at a VGK of 15 kV were measured 0.25 µA and 0.41 µA at 20°C and 200°C respectively.
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Authors: Lin Cheng, Anant K. Agarwal, Michael J. O'Loughlin, Craig Capell, Khiem Lam, Charlotte Jonas, Jim Richmond, Al Burk, John W. Palmour, Aderinto Ogunniyi, Heather O’Brien, Charles Scozzie
Abstract: In this work, we report our recently developed 16 kV, 1 cm2, 4H-SiC PiN diode results. The SiC PiN diode was built on a 120 µm, 2×1014/cm3 doped n-type SiC drift layer with a device active area of 0.5175 cm2. Forward conduction of the PiN diode was characterized at temperatures from 20°C to 200°C. At high injection-current density (JF) of 350 ~ 400 A/cm2, the differential on-resistance (RON,diff) of the SiC PiN diode decreased from 6.08 mΩ·cm2 at 20°C to 5.12 mΩ·cm2 at 200°C, resulting in a very small average temperature coefficient of –5.33 µΩ·cm2/°C, while the forward voltage drop (VF) at 100 A/cm2 reduced from 4.77 V at 20°C to 4.17 V at 200°C. This is due to an increasing high-level carrier lifetime with an increase in temperature, resulting in reduced forward voltage drop. We also observed lower RON,diff at higher injection-current densities, suggesting that a higher carrier lifetime is needed in this lightly doped n-type SiC thick epi-layer in order to achieve full conductivity modulation. The anode to cathode reverse blocking leakage current was measured as 0.9 µA at 16 kV at room temperature.
895
Authors: Maria Luisa Polignano, Domenico Caputo, Giuseppe Pavia, F. Zanderigo
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Authors: Nudjarin Ramungul, Yan Jun Zheng, R. Patel, V. Khemka, T. Paul Chow
1049
Authors: Gil Chung, Mark J. Loboda, Mike F. MacMillan, Jian Wei Wan, Darren M. Hansen
Abstract: Excess carrier lifetimes in 4H SiC epitaxial wafers were characterized by microwave photoconductive decay (o/PCD). The measured decay compromised of surface and bulk recombination curves have fast and slow components. Measured lifetimes are not changed with various surface passivation techniques. High resolution lifetime maps show good correlation with stress birefringence images and lower lifetime around extended material defects like grainboundaries, defect clusters, edge defects and polytype switching bands. Chlorosilane based CVD epiwafers show higher bulk lifetime values than standard silane based CVD materials due to less bulk lifetime defect density.
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Authors: Tetsuya Miyazawa, Takeshi Tawara, Hidekazu Tsuchida
Abstract: An epitaxial growth technique for 4H-SiC with B doping was developed to control the carrier lifetimes of the epilayers. A linear relationship was observed between the B doping concentration and the flow rate of tri-ethyl-boron, which was used as the B doping source. A room temperature photoluminescence spectrum of a N-and B-doped epilayer showed a broad B-related peak at 2.37 eV instead of a band-edge luminescence, which indicates that the carrier recombination path was changed by the B doping. The minority carrier lifetime decreased (< 30 ns at 250°C) with increasing B doping concentration. The thermal stability of the short carrier lifetime was compared with a conventional carrier lifetime reduction method, namely an electron irradiation technique. After thermal annealing at 1700°C, the carrier lifetime of the electron irradiated epilayer recovered while that of the B-doped epilayer remained, indicating that the carrier lifetime controlled by the B doping technique was more stable against the thermal processes.
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Authors: Nudjarin Ramungul, V. Khemka, T. Paul Chow, Mario Ghezzo, James W. Kretchmer
1065
Authors: Aurimas Uleckas, Eugenijus Gaubas, Joan Marc Rafi, Jiahe Chen, De Ren Yang, Hidenori Ohyama, Eddy Simoen, Jan Vanhellemont
Abstract: Results are presented of a comparative study of diodes processed on n-type Cz grown Si substrates without and with Ge doping concentration of about 1019 cm-3 and 1020 cm-3. In order to investigate thermal donor formation, isothermal annealing at 450°C for 0.5 – 5 h was carried out. As processed diodes were also irradiated with 2 MeV electrons with fluences in the range between 1014 and 1017 e/cm2 to investigate the Ge doping influence on irradiation induced defect formation. Diodes after thermal and radiation treatments have been investigated by combining different techniques.
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Authors: Peder Bergman, H. Jakobsson, L. Storasta, F.H.C. Carlsson, Björn Magnusson, S.G. Sridhara, G.R. Pozina, H. Lendenmann, Erik Janzén
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Authors: R.J. Kumar, Peter A. Losee, Can Hua Li, Joseph Seiler, I. Bhat, T. Paul Chow, J.M. Borrego, Ronald J. Gutmann
Abstract: A Microwave Photoconductivity Decay (M-PCD) technique which senses changes insample conductivity as carriers recombine following excitation by a laser pulse, has been used to determine the minority carrier recombination lifetime from the decay rate of carriers in 4H-SiC epitaxial layers. Decay times varying from 60 ns to 500 ns have been measured, with the decay increasing with thickness. Device simulations show that I-V characteristics of pin diodes fabricated with these epitaxial layers are compatible with the observed decay times.
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