Papers by Keyword: Deep Level

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Authors: Tsunenobu Kimoto, Toshihiro Yamamoto, Zhi Yong Chen, Hiroshi Yano, Hiroyuki Matsunami
189
Authors: J. Vacas, H. Lahrèche, Teresa Monteiro, C. Gaspar, Eduarda Pereira, Christian Brylinski, M.A. di Forte-Poisson
1651
Authors: G. Pasold, F. Albrecht, Joachim Grillenberger, Ulrike Grossner, C. Hülsen, R. Sielemann, W. Witthuhn
487
Authors: Czeslaw Skierbiszewski, W. Jantsch, Zbysław Wilamowski, K. Lübke, T. Suski
1025
Authors: Björn Magnusson, Alexsandre Ellison, F.H.C. Carlsson, Nguyen Tien Son, Erik Janzén
365
Authors: G. Pasold, N. Achtziger, Joachim Grillenberger, W. Witthuhn
471
Authors: Rudi Ono, Makato Fujimaki, Hoon Joo Na, Satoshi Tanimoto, Takashi Shinohe, Tsutomu Yatsuo, Hideyo Okushi, Kazuo Arai
435
Authors: Mads Mikelsen, Ulrike Grossner, Jan H. Bleka, Edouard V. Monakhov, Bengt Gunnar Svensson, Rositza Yakimova, Anne Henry, Erik Janzén, Alexander A. Lebedev
425
Authors: Masashi Kato, Kosuke Kito, Masaya Ichimura
Abstract: We measured the temperature dependence of the electrical resistivity for two high-purity undoped 6H-SiC bulk wafers with resistivities of 1.5103 cm and 8.3108 cm at room temperature. We also characterized the deep levels affecting the semi-insulating property by current deep level transient spectroscopy (I-DLTS) and photo induced current level transient spectroscopy (PICTS) measurements. The activation energies of the resistivity were 0.11 eV and 0.59 eV for the samples with lower and higher resistivities, respectively. In I-DLTS and PICTS spectra, the sample with lower resistivity shows a donor level at Ec0.17 eV and two acceptor levels around Ec0.40 eV, while the sample with higher resistivity shows acceptor levels at Ec0.77 eV and Ev+0.46 eV. We calculated the temperature dependence of the resistivity with a model considering one donor level and one acceptor level based on parameters from I-DLTS peaks. We reproduced the experimental results only for the sample with lower resistivity. The acceptor level near the valence band needs to be considered to explain the resistivity for the sample with higher resistivity.
381
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