Papers by Keyword: Defect Density

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Authors: Michael Treu, Roland Rupp, Helmut Brunner, Fanny Dahlquist, Christian Hecht
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Authors: M.A. Abdel-Rahman, M. Elsayed, Ahmed G. Attallah, A.A. Ibrahim, Emad A. Badawi
Abstract: The result of positron lifetime measurements of a defected 5251 Al alloy is reported. Positron lifetime is measured as a function of the thickness reduction of the sample which shows a nearly linear increase and then becomes constant; which can be considered to be a reason for the defect movement saturation. The trapping rate, trapping efficiency, trapping cross-section, defect concentration and defect density of positrons are also measured for the sample concerned. The behaviors of these parameters are matched with theoretical calculations. Data are analyzed using the PATFIT88 computer program.
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Authors: M. Rose, Adam G. Balogh, Horst Hahn
213
Authors: Joseph J. Sumakeris, Mrinal K. Das, Seo Young Ha, Edward Hurt, Kenneth G. Irvine, Michael J. Paisley, Michael J. O'Loughlin, John W. Palmour, Marek Skowronski, H. McD. Hobgood, Calvin H. Carter Jr.
Abstract: We present a survey of the most important factors relating to an epitaxial SiC growth process that is suitable for bipolar power devices. During the last several years, we have advanced our hot-wall SiC epitaxial growth technology to the point that we can support the transition of bipolar power devices from demonstrations to applications. Two major concerns in developing a suitable epitaxial technology are epilayer uniformity and extended defect density. Our state-of-theart capability permits the realization of 1-cm2 area devices with exceptional yields. Another major concern is the stability of bipolar devices during forward conduction. We have developed proprietary substrate and epilayer preparation technologies that have essentially eliminated Vf drift as a significant barrier to the exploitation of SiC based bipolar devices.
155
Authors: Anshuman Patra, Swapan Kumar Karak, Snehanshu Pal
Abstract: Mechanical alloying (MA) is a potential processing method for various equilibrium and non-equilibrium alloy phases such as supersaturated solid solution, metastable crystalline, amorphous, quasi-crystalline phases, nanostructures. Compared to conventional high temperature material processing such as melting and casting, improvement of solid solubility limit results from mechanical alloying at room temperature. The solid solubility increases with increase in milling time due to enhanced stress assisted atomic diffusion during particle refinement and reaches a saturation level at higher milling time. The extension of solid solubility is attributed to thermodynamic, dynamic or kinetic factors such as high dislocation density due to severe plastic deformation during particle refinement and enhanced diffusivity during MA. The review aims to discuss the insight of MA than other non-equilibrium processing in terms of achieving higher solubility, reasoning and mechanism of solubility improvement during MA of different alloy systems.
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Authors: Christian A. Zorman, K.N. Vinod, A.A. Yasseen, Mehran Mehregany
223
Authors: Alexsandre Ellison, Jie Zhang, W. Magnusson, Anne Henry, Qamar-ul Wahab, Peder Bergman, Carl G. Hemmingsson, Nguyen Tien Son, Erik Janzén
131
Authors: Daniel L. Goodman, Dustin Rabideau, Mani Sobhian
Abstract: Spin rinse drying (SRD) and surface tension gradient drying (STG) are used to clean and dry wafers after wet processing. These methods are effective at removing surface fluid and fluid trapped by capillary forces in small (<1um) features. SRD and STG processes combine driven fluid flows with controlled evaporation of thin water films to leave a dry wafer with low defect density (i.e. a low number of physical particle process adders, or areas of haze or oxidation).
161
Authors: Marina G. Mynbaeva, N.S. Savkina, Alla S. Tregubova, M.P. Scheglov, Alexander A. Lebedev, A.S. Zubrilov, A. Titkov, A. Kryganovski, K. Mynbaev, Natasha V. Seredova, D. Tsvetkov, S. Stepanov, A.E. Cherenkov, I. Kotousova, Vladimir Dmitriev
225
Authors: Jing Yan Li, Xiang Bo Zeng, Hao Li, Xiao Bing Xie, Ping Yang, Hai Bo Xiao, Xiao Dong Zhang, Qi Ming Wang
Abstract: We explain the experimental improvement in long wavelength response by hydrogen plasma treatment (HPT) in n/i interface. The absorption coefficient of the intrinsic microcrystalline silicon (μc-Si) is decreased in the low energy region (0.8~1.0 eV) by HPT, which indicates a lower defect density in μc-Si layer deposited with HPT than its counterpart without HPT. Simulation by one-dimensional device simulation program for the Analysis of Microelectronic and Photonic Structures (AMPS-1D) shows a higher long wavelength response in μc-Si solar cell if the defect density in intrinsic μc-Si layer is smaller. Our simulation results also disclose that the less defect density in intrinsic layer, the lower recombination rate and the higher electric field is. Higher electric field results in longer drift length which will promote collection of carriers generated by photons with long wavelength. Thus we deduce that HPT decreased defect density in absorber layer and improved the performance of μc-Si solar cells in long wavelength response.
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