Papers by Keyword: Dislocation

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Authors: Fujio Abe

Abstract: The effect of fine precipitates, excess dislocations and sub-boundary hardening on creep strain behavior in the transient region has been...

47
Authors: Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Jun Chen, Ronit R. Prakash, Jian Yong Li, Takashi Sekiguchi, Takuto Kojima, Yoshio Ohshita, Atsushi Ogura, Masayuki Fukuzawa, Satoshi Nakano, Bing Gao, Koichi Kakimoto

Abstract: To get the optimized condition and ideal furnace structure, we have performed seed cast growth of mono-crystalline Si by using...

89
Authors: R.T. Leonard, Y. Khlebnikov, Adrian R. Powell, C. Basceri, M.F. Brady, I. Khlebnikov, Jason R. Jenny, D.P. Malta, Michael J. Paisley, Valeri F. Tsvetkov, R. Zilli, E. Deyneka, H.McD. Hobgood, Vijay Balakrishna, Calvin H. Carter Jr.

Abstract: Recent advances in PVT c-axis growth process have shown a path for eliminating micropipes in 4HN-SiC, leading to the demonstration of zero...

7
Authors: Yu Qiang Gao, Hong Yan Zhang, Yan Min Zong, Huan Huan Wang, Jianqiu Guo, Balaji Raghothamachar, Michael Dudley, Xi Jie Wang

Abstract: 150 mm diameter 4H-SiC boules were grown by the physical vapor transport (PVT) method. Synchrotron white beam X-ray topography (SWBXT) was...

41
Authors: Kazutoshi Kojima, Hajime Okumura, Satoshi Kuroda, Kazuo Arai, Akihiko Ohi, Hiroyuki Akinaga

Abstract: Homoepitaxial growth was carried out on 4H-SiC on-axis substrate by horizontal hot wall chemical vapor deposition. By using carbon face...

93
Authors: G.R. Canova, Yves Bréchet, L.B. Kubin, Benoit Devincre, Vassilis Pontikis, M. Condat
101
Authors: Ladislas P. Kubin, Benoit Devincre, G.R. Canova, Yves Bréchet
217
Authors: Y. Yanagisawa, Tomoaki Hatayama, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki

Abstract: Propagations of dislocations in 4H-SiC were evaluated three-dimensionally by a planar mapping EBIC method with the control of accelerating...

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Showing 1 to 10 of 855 Paper Titles