Papers by Keyword: Electro-Thermal Simulation

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Authors: Shi Niu, Maxime Berthou, Dominique Tournier
Abstract: In many power electronic inverters, the gate drive failure may put the switch normally-on in short-circuit (SC) risk. The high power density generated thus leads rapidly to the transistor failure. This paper presents our study via electro-thermal simulation of a 1200 V JFET under short circuit. It provides deep insight of physical phenomena present in the JFET during the short-circuit and will allow further improvements and understanding of it.
797
Authors: Andrea Irace, Vincenzo d'Alessandro, Giovanni Breglio, Paolo Spirito, Andrea Bricconi, Rossano Carta, Diego Raffo, Luigi Merlin
Abstract: The electrothermal behavior of 4H-SiC 600 V Schottky diodes operated in forward mode is analyzed through numerical and analytically-based simulations. It is shown that the unexpected occurrence of voltage surges systematically detected in state-of-the-art devices is a thermally-induced effect due to the compound contribution of a) the negative temperature coefficient of the forward current at high voltages and b) the relatively high package-to-ambient thermal resistance. As a main result, it is demonstrated that the proposed approaches are suitable to accurately predict the value of a “critical” current density beyond which voltage surges may arise.
1151
Authors: Nicolas G. Wright, D.J. Morrison, C. Mark Johnson, Anthony G. O'Neill
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Authors: W. Liu, Erik Danielsson, Carl Mikael Zetterling, Mikael Östling
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Authors: W. Liu, Carl Mikael Zetterling, Mikael Östling, Joakim Eriksson, Niklas Rorsman, Herbert Zirath
1209
Authors: C.W. Chan, Fan Li, Philip A. Mawby, Peter M. Gammon
Abstract: A comparable study is made on the energy capability of 190 V LDMOSFETs in Si/SiC, SOI, PSOI and PSOSiC technology, using capacitive and inductive switching circuits established in SILVACO Mixed-mode simulators. The results show that the PSOSiC has a thermal advantage compared with other SOI structures under a 48-μs-power-pulse condition, but the Si/SiC device offers superior cooling and energy handling ability in all switching cases despite having a larger chip area.
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