Papers by Keyword: HF

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Authors: Steven Verhaverbeke
Authors: Kenichi Sano, Masayuki Wada, Frederik E. Leys, Roger Loo, Andriy Hikavyy, Paul W. Mertens, James Snow, Akira Izumi, Katsuhiko Miya, Atsuro Eitoku
Abstract: Strained silicon engineering was first used at the 90-nm node. Nowadays, a series of techniques has seen wide-spread use and many derivatives are available because of their ease of integration and cost-effective features [ , ]. As a main part of stressor technique, embedded SiGe-S/D technology is reported to improve the pMOSFET drive current [ , ].
Authors: Kenichi Sano, Frederik E. Leys, G. Dilliway, Roger Loo, Paul W. Mertens, James Snow, Akira Izumi, Atsuro Eitoku
Authors: Z.W. He, Xing Qin Liu, D.Y. Xu, Qiang Su, D.F. Guo, Y.Y. Wang
Abstract: The characteristic of nanoporous SiO2 thin film prepared by sol-gel method with catalyst HF was studied by scanning electron microscopy, Fourier transform infrared, HP analyzer series and ellipsometry. Results showed the incorporation of HF effectively adjusted the pore size and distribution, and lowered the leakage current density and dielectric constant. This might be related to the weak acidity of HF, which properly controlled the velocity of chemical reaction in solution, and to the introduction of strong Si-F bonds, which had the lower electronegative and the larger volume.
Authors: Philippe Garnier, Marc Neyens
Abstract: Still nowadays in integrated circuits manufacturing, few materials patterns are defined by a wet etch on patterned deep UV photoresist. From dies to dies generation, an optical performance improvement is required, hence an evolution with thinner and thinner positive resist. This makes these latter more sensitive to wet chemical etchant through the polymer, reducing their protection of the underneath material. Following characterizations enable a clear understanding of BHF (Buffered HF) benefits versus diluted HF during a gate oxide definition.
Authors: Paola González-Aguirre, Hervé Fontaine, Carlos Beitia, Jim Ohlsen, Jorgen Lundgren
Abstract: Semiconductor manufacturing technologies have developed to the point where molecules, such as water, oxygen and airborne molecular contaminants (AMCs), have become detrimental in specific process conditions. Front Opening Unified Pods (FOUPs) are designed as controlled microenvironments (MEs) that protect processed wafers from AMCs during storage and transport. However, it has been demonstrated that FOUPs are able to accumulate by sorption molecules outgassed by processed wafers. Such contaminants are then able to be subsequently released and transferred to other sensitive wafers leading to detrimental impact [1,2]. This cross-contamination scheme from FOUP to wafer was evidenced especially for volatile acids such as HF or HCl and is responsible of yield losses due to drastic corrosion issues or crystal growth on Cu, Al or TiN materials [1,3,4]. These cross contamination issues can be reduced or controlled using low sorption and outgassing polymer materials as previously reported [4,5]. Another AMC control measure is to purge the FOUP with a dry gas. This provides several advantages, for example, wafers are not easily oxidized thus preventing oxide layers, deposition of hydrocarbons and metal defects [6] However, there is no measured information about the purge impact has on AMC control inside a FOUP. The purpose of this paper is to show and quantify what effect two different FOUP polymers using nitrogen and clean dry air (CDA) purge have on the HF volatile acid control through the Cu-wafers storage.
Authors: Jae Hyun Bae, Jae Mok Jung, Kwon Taek Lim
Abstract: In this work, we studied HF/scCO2 dry etching processes with various co-solvents for the purpose of reducing the residues. The effect of co-solvent on etch rate and selectivity was also investigated.
Authors: Hervé Fontaine, Marc Veillerot, Adrien Danel
Authors: Salima Abu Jeriban, Ivette Guiot, Luc Bacherius, Joris Proost, Erik Sleeckx, Rita Vos, Paul W. Mertens
Authors: Rabi Cheggou, N. Gabouze, A. Kadoun
Abstract: The basic voltammetric data of silicon/ fluoride-electrolyte interfaces available in the literature appear to be rather divers because of the large number of experimental parameters like semiconductor type, crystallographic orientation, fluoride acid concentration CF, pH and electrode rotation rate. In the present work we have studied the effects of parameters such as electrode rotating rate upon the voltammograms in order to show the electrode geometry effects on current transport through Si/HF interface. The decrease of the current experimentally observed after the initial current peak (Si/HF current-potential curve) is investigated. The origin of this behaviour lies in substitution of Si-H surface bond by SiO2 in the first seconds following the potential jump. The diffusion current problem of a rotating porous silicon electrode has been analysed based on the mass transfer equations for partially blocked electrode. The blocking parameter is calculated.
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