Papers by Keyword: Herojunction Bipolar Transistor (HBT)

Paper TitlePage

Authors: R. Alcubilla, D. Bardés, A. Orpella, J. Calderer, L.F. Marsal, J. Pallarès, X. Correiga
1455
Authors: Junichi Murota, Masao Sakuraba, Bernd Tillack
607
Authors: Byoung Gue Min, Jong Min Lee, Seong Il Kim, Chul Won Ju, Kyung Ho Lee
Abstract: A reliable fabrication method for providing close spacing between the emitter mesa and the base contact metal of InP-based heterojunction bipolar transistor is disclosed. The silicon nitride sidewall was formed on the emitter electrode and mesa periphery. It was used as a mask for emitter mesa etching and also as an overhang to self-align the base contact with respect to the emitter mesa. The self-aligned device fabricated by this technique exhibited better high-frequency performances with fT of 138 GHz and fmax of 143 GHz, respectively, superior to the re-aligned one on the same epitaxy wafer.
97
Authors: Xiao Bo Xu, He Ming Zhang, Hui Yong Hu, Shan Shan Qin, Jiang Tao Qu
Abstract: An analytical expression for collector resistance of a novel vertical SiGe partially-depleted accumulation-subcollector HBT on thin SOI is obtained. Supported by simulation result, the resistance decreases quickly with the increase of substrate-collector bias and improves the transit frequency dramatically. The model is found to be significant in the design and simulation of 0.13 μm millimeter wave SiGe SOI BiCMOS technology.
5452
Authors: Il Ho Kim
Abstract: Pd/Ge/Ti/Pt and Pd/Si/Ti/Pt ohmic contacts to n-type InGaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In both ohmic contacts, low-resistance and non-spiking planar interfaces were obtained by rapid thermal annealing. RF performance of the AlGaAs/GaAs HBT was also examined by employing these contact systems.
921
Authors: Erik Danielsson, Carl Mikael Zetterling, Mikael Östling, Sang Kwon Lee, Kevin J. Linthicum, D.B. Thomson, O.H. Nam, Robert F. Davis
1049
Authors: Jun Suda, Yuki Nakano, Syouta Shimada, Koichi Amari, Tsunenobu Kimoto
Abstract: Characterization of n+-GaN/p−-SiC and n+-GaN/p+-SiC heterojunctions as well as fabrication of GaN/SiC heterojunction bipolar transistors (HBTs) using these heterojunctions is presented. The electroluminescence spectrum from n+-GaN/p+-SiC heterojunction diodes under forward bias clearly indicates electron injection from n+-GaN into p+-SiC. HBTs consisting of n+-GaN emitter /p+-SiC base/n−-SiC collector/n+-SiC substrate have been fabricated. Although clear common-base properties were obtained, the current gain was very low (10-4). SiC homojunction bipolar junction transistors (BJT) using the same base-collector junction exhibited a current gain value of 0.5, suggesting the low current gain of GaN/SiC HBTs originates from low emitter efficiency.
1545
Authors: Xiao Bo Xu, He Ming Zhang, Hui Yong Hu, Jian Li Ma, Li Jun Xu
Abstract: The standard Early voltage of the SPICE Gummel-Poon model (SGP) is generalized for SiGe npn heterojunction bipolar transistors (HBTs). An accurate model for Early effects compatible with the SGP model is obtained considering graded germanium induced bandgap narrowing effect in the base in modern SiGe HBTs and simplified to a compact model which is consistent with ISE TCAD simulation results. The presentation of the Early effect model is significant for the design and simulation of the high performance SiGe BiCMOS technology.
3311
Authors: Koichi Amari, Jun Suda, Tsunenobu Kimoto
Abstract: The electrical properties of n+-GaN/p+-SiC heterojunction diodes have been investigated by varying the acceptor concentration of p+-SiC epilayers (Na) and polytype of SiC (4H- and 6H-SiC). The current-voltage (I-V) characteristics of diodes with Na ~ 1x1019 cm-3 were dominated by tunneling-assisted current. The diodes with Na ~ 1x1018 cm-3 exhibit excellent characteristics and 6H-SiC may be a better choice from a view point of electron injection into p-SiC base. Compared to previous investigations (Na<1016cm-3), we could obtain good rectification with p-SiC doped to two-order-of-magnitude higher acceptor concentration.
1039
Authors: D. Wolansky, G.G. Fischer, D. Knoll, D. Bolze, Bernd Tillack, P. Schley, Y. Yamamoto
249
Showing 1 to 10 of 15 Paper Titles