Papers by Keyword: Heteroepitaxy

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Authors: Katja Tonisch, Wael Jatal, Ralf Granzner, Mario Kittler, Uwe Baumann, Frank Schwierz, Jörg Pezoldt

Abstract: We present the realization of high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures grown on silicon substrates...

1219
Authors: Thomas Kreiliger, Marco Mauceri, Marco Puglisi, Fulvio Mancarella, Francesco La Via, Danilo Crippa, Wlodek Kaplan, Adolf Schöner, Anna Marzegalli, Leo Miglio, Hans von Känel

Abstract: The growth morphology of epitaxial 3C-SiC crystals grown on hexagonal pillars deeply etched into Si (111) substrates is presented. Different...

151
Authors: Christopher Locke, G. Kravchenko, P. Waters, J. D. Reddy, K. Du, A.A. Volinsky, Christopher L. Frewin, Stephen E. Saddow

Abstract: Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in order to study the resulting mechanical properties of...

633
Authors: Giuseppe D'Arrigo, Andrea Severino, G. Milazzo, Corrado Bongiorno, Nicolò Piluso, Giuseppe Abbondanza, Marco Mauceri, Giuseppe Condorelli, Francesco La Via

Abstract: 3C-SiC devices are hampered by the defect density in heteroepitaxial films. Acting on the substrate, it is possible to achieve a better...

135
Authors: Ruggero Anzalone, Andrea Severino, Giuseppe D'Arrigo, Corrado Bongiorno, Patrick Fiorenza, Gaetano Foti, Giuseppe Condorelli, Marco Mauceri, Giuseppe Abbondanza, Francesco La Via

Abstract: The aim of this work is to improve the heteroepitaxial growth process of 3C-SiC on Si substrates using Trichlorosilane (SiHCl3) as the...

243
Authors: Anne Henry, Xun Li, Henrik Jacobson, Sven Andersson, Alexandre Boulle, Didier Chaussende, Erik Janzén

Abstract: The growth of 3C-SiC on hexagonal polytype is addressed and a brief review is given for various growth techniques. The Chemical Vapor...

257
Authors: Arthur Vo-Ha, Mickaël Rebaud, Davy Carole, Mihai Lazar, Alexandre Tallaire, Veronique Soulière, Jose Carlos Pinero, Daniel Araújo, Gabriel Ferro

Abstract: This work deals with the localized epitaxial growth of SiC on (100) diamond substrate using the Vapour-Liquid-Solid (VLS) transport. An...

234
Authors: Hiroyuki Matsunami
125
Authors: Jörg Pezoldt, Bernd Schröter, Volker Cimalla, Thomas Stauden, R. Goldhahn, Henry Romanus, Lothar Spieß
179
Authors: Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta, Masayuki Abe, Adolf Schöner, Mietek Bakowski, Per Ericsson, Gerhard Pensl

Abstract: In 3C-SiC MOSFETs, planar defects like anti-phase boundaries (APBs) and stacking-faults (SFs) reduce the breakdown voltage and induce...

89
Showing 1 to 10 of 126 Paper Titles