Papers by Keyword: Interphase Boundaries

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Authors: D. Hamana, Zakaria Boumerzoug
593
Authors: Manuel J. Iribarren, O.E. Agüero, Fanny Dyment
1211
Authors: Yu.A. Lyashenko, Andriy Gusak
Abstract: A model of alloying in the three-layer thin-film system at the low temperature is constructed. Solid solution formation takes place as a result of the diffusion-induced grain boundary migration (DIGM). The unknown parameters are determined from the set of the equations for: (1) grain boundary diffusion along the moving planar phase boundary; (2) the entropy balance in the region of the phase transformation moving with constant velocity; (3) the maximum rate of the free energy release. We consider the model system with complete solubility of the components. The main parameters are self-consistently determined using thermodynamic and kinetic description in the frame of the regular solution model. The model allows determining the concentration distribution along the planar moving phase boundary, its velocity, the thickness of the forming solid solution layer and the limiting average concentration in this layer.
81
Authors: Mikhail Yu. Gutkin, A.E. Romanov, Elias C. Aifantis
605
Authors: Mykola S. Boltovets, V.N. Ivanov, A.Yu. Avksentyev, A.E. Belyaev, A.G. Borisenko, O.A. Fedorovitsh, Raisa V. Konakova, Ya.Ya. Kudryk, Petr M. Lytvyn, Victor V. Milenin, A.V. Sachenko, Yu.N. Sveschnikov
Abstract: In this communication we present the results of study of new contact systems to GaN epitaxial layers grown on sapphire and n-type 6H-SiC monocrystals. The TiBx nanostructure phase has been used during manufacturing Ti – Al – TiBx – Au and TiBx contact systems. The n-GaN epitaxial layers of 1 µm thickness were grown on [0001] sapphire substrate by vapor-phase epitaxy. The n-type 6H-SiC monocrystals were grown by Lely method with the donor concentration of 2x1018 cm3. The layers of Ti, Al, TiBx and Au were deposited by magnetron sputtering followed by high-temperature annealing.
1061
Authors: W.A. Świątnicki, M.W. Grabski
769
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