Papers by Keyword: MOS

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Authors: Sei Hyung Ryu, Craig Capell, Charlotte Jonas, Michael J. O'Loughlin, Jack Clayton, Edward van Brunt, Khiem Lam, Jim Richmond, Arun Kadavelugu, Subhashish Bhattacharya, Albert A. Burk, Anant Agarwal, Dave Grider, Scott T. Allen, John W. Palmour

Abstract: A 1 cm x 1 cm 4H-SiC N-IGBT exhibited a blocking voltage of 20.7 kV with a leakage current of 140 μA, which represents the highest blocking...

Authors: Jean Lorenzzi, Romain Esteve, Nikoletta Jegenyes, Sergey A. Reshanov, Adolf Schöner, Gabriel Ferro

Abstract: In this work we report on the growth and preparation of 3C-SiC(111) material for metal-oxide-semiconductor (MOS) application. In order to...

Authors: T. Hirao, Hiroshi Yano, Tsunenobu Kimoto, Hiroyuki Matsunami, Hiromu Shiomi
Authors: H.Ö. Ólafsson, Christer Hallin, Einar Ö. Sveinbjörnsson
Authors: Tian Yun Yan

Abstract: A new system model for objective speech quality evaluation based on the improved recurrent generalized congruence neural network...

Authors: Yan Ming, Li Zhen Wang, Xu Jiu Xia

Abstract: A 4kbps vocoder based on MELP is presented in this paper. It uses the parameter encoding and mixed excitation technology to ensure the...

Authors: Fredrik Allerstam, Einar Ö. Sveinbjörnsson

Abstract: This study is focused on characterization of deep energy-level interface traps formed during sodium enhanced oxidation of n-type Si face...

Authors: H.Ö. Ólafsson, Einar Ö. Sveinbjörnsson, T.E. Rudenko, V.I. Kilchytska, I.P. Tyagulski, I.N. Osiyuk
Authors: Xue Hui Wei, Meng Zhao

Abstract: Video quality assessment can be gotten by combination the distortion in the space area and the time area. As we all known that edge...

Authors: Takuji Hosoi, Makoto Harada, Yusuke Kagei, Yuu Watanabe, Takayoshi Shimura, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Heiji Watanabe

Abstract: We propose the use of an aluminum oxynitride (AlON) gate insulator for 4H-SiC MIS devices. Since direct deposition of AlON on 4H-SiC...

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