Papers by Keyword: MOSFET

Paper TitlePage

Authors: Hiroshi Kono, Takuma Suzuki, Kazuto Takao, Masaru Furukawa, Makoto Mizukami, Chiharu Ota, Shinsuke Harada, Junji Senzaki, Kenji Fukuda, Takashi Shinohe
Abstract: 1.2 mm × 1.2 mm and 2.7 mm × 2.7 mm silicon carbide double-implanted metal-oxide-semiconductor field-effect transistors (DIMOSFETs) were fabricated on 4H-SiC (000-1) carbon face. 1.2 mm × 1.2 mm DIMOSFETs were characterized from room temperature to 150°C. At room temperature, the specific on-resistance of this MOSFET was 5.7 mΩcm2 at a gate bias of 20 V and a drain voltage of 1.0 V. The blocking voltage of this MOSFET was 1450 V based on the avalanche current. At 150 °C, the specific on-resistance increased from 5.7 mΩcm2 to 9.1 mΩcm2 and the threshold voltage decreased from 4.9 V to 4.1 V. The blocking voltage increased from 1450V to 1500V. 2.7 mm × 2.7 mm DIMOSFETs were also characterized at room temperature. They showed a specific on-resistance of 8.0 mΩcm2 at a gate bias of 20 V and a drain voltage of 1 V. The blocking voltage of this device was 1550 V, which was determined by the avalanche current. The time-zero dielectric breakdown (TZDB) and time-dependent dielectric breakdown (TDDB) characteristics of 180 μm × 180 μm MOS capacitor were estimated. At room temperature (RT), TZDB was 9.3 MV/cm and the charge to breakdown value of 63% cumulative failure (Qbd) was 72 C/cm2. The temperature dependence of Qbd measurements showed that it deceased from 72 C/cm2 at RT to 14 C/cm2 at 250 °C. Switching characteristics of 1.2 mm × 1.2 mm DIMOSFETs were obtained by the double-pulse measurements. The turn-on time and the turn-off time were 36 nsec and 53 nsec, respectively.
607
Authors: Mrinal K. Das, David Grider, Scott Leslie, Ravi Raju, Michael Schutten, Allen Hefner
Abstract: The majority carrier domain of power semiconductor devices has been extended to 10 kV with the advent of SiC MOSFETs and Schottky diodes. Twenty-four MOSFETs and twelve JBS diodes have been assembled in a 10 kV half H-bridge power module to increase the current handling capability to 120 A per switch without compromising the die-level characteristics. For the first time, a custom designed system (13.8 kV to 465/√3 V solid state power substation) has been successfully demonstrated with these state of the art SiC modules up to 855 kVA operation and 97% efficiency. Soft-switching at 20 kHz, the SiC enabled SSPS represents a 70% reduction in weight and 50% reduction in size when compared to a 60 Hz conventional, analog transformer.
1225
Authors: Shinsuke Harada, Y. Kobayashi, A. Kinoshita, N. Ohse, Takahito Kojima, M. Iwaya, Hiromu Shiomi, Hidenori Kitai, Shinya Kyogoku, Keiko Ariyoshi, Yasuhiko Onishi, Hiroshi Kimura
Abstract: A critical issue with the SiC UMOSFET is the need to develop a shielding structure for the gate oxide at the trench bottom without any increase in the JFET resistance. This study describes our new UMOSFET named IE-UMOSFET, which we developed to cope with this trade-off. A simulation showed that a low on-resistance is accompanied by an extremely low gate oxide field even with a negative gate voltage. The low RonA was sustained as Vth increases. The RonA values at VG=25 V (Eox=3.2 MV/cm) and VG=20V (Eox=2.5 MV/cm), respectively, for the 3mm x 3mm device were 2.4 and 2.8 mWcm2 with a lowest Vth of 2.4 V, and 3.1 and 4.4 mWcm2 with a high Vth of 5.9 V.
497
Authors: Dethard Peters, Thomas Aichinger, Thomas Basler, Wolfgang Bergner, Daniel Kueck, Romain Esteve
Abstract: A detailed analysis of the typical static and dynamic performance of the new developed Infineon 1200V CoolSiCTM MOSFET is shown which is designed for an on-resistance of 45 mΩ. In order to be compatible to various standard gate drivers the gate voltage range is designed for-5 V in off-state and +15 V in on-state. Long term gate oxide life time tests reveal that the extrinsic failure evolution follows the linear E-model which allows a confident prediction of the failure rate within the life time of the device of 0.2 ppm in 20 years under specified use condition.
489
Authors: Hiroshi Kono, Takuma Suzuki, Makoto Mizukami, Chiharu Ota, Shinsuke Harada, Junji Senzaki, Kenji Fukuda, Takashi Shinohe
Abstract: Silicon carbide Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors (DIMOSFETs) were fabricated on 4H-SiC (000-1) carbon face. The DIMOSFETs were characterized from room temperature to 250°C. At room temperature, they showed a specific on-resistance of 4.9 mΩcm2 at a gate bias of 20 V and a drain voltage of 1.0 V. The specific on-resistance taken at a drain current (Id) of 260 A/cm2 was 5.0 mΩcm2. The blocking voltage of this device was higher than 1360 V at room temperature. At 250°C, the specific on-resistance increased from 5.0 mΩcm2 to 12.5 mΩcm2 and the threshold voltage determined at Id = 26 mA/cm2 decreased from 5.5 V to 4.3 V.
987
Authors: Hiroshi Kono, Masaru Furukawa, Keiko Ariyoshi, Takuma Suzuki, Yasunori Tanaka, Takashi Shinohe
Abstract: Silicon carbide double-implanted metal-oxide-semiconductor field-effect transistors (DIMOSFETs) were fabricated on 4H-SiC (000-1) carbon face. The effect of current spread layer (CSL) structure was studied. 1.9 mm × 1.9 mm DIMOSFETs were characterized from room temperature to 200°C. At room temperature, the specific on-resistance of this MOSFET was 14.8 mΩcm2 at a gate bias of 20 V and a drain voltage of 0.5 V. The blocking voltage of this MOSFET was 3300 V. At 300 °C, the specific on-resistance increased from 14.8 mΩcm2 to 83.9 mΩcm2 and the threshold voltage decreased from 5.3 V to 3.4 V.
935
Authors: Kazukuni Hara, Hiroaki Fujibayashi, Yuuichi Takeuchi, Shoichiro Omae
Abstract: In this work, we have developed a selective embedded epitaxial growth process on 150-mm-diameter wafer by vertical type hot wall CVD reactor with the aim to realize the all-epitaxial 4H-SiC MOSFETs [1, 2, 3, 4, 5]. We found that at elevated temperature and adding HCl, the epitaxial growth rate at the bottom of trench is greatly enhanced compare to growth on the mesa top. And we obtain high growth rate 7.6μm/h at trench bottom on 150mm-diameter-wafer uniformly with high speed rotation (1000rpm).
43
Authors: Amador Pérez-Tomás, Marcel Placidi, N. Baron, Sébastien Chenot, Yvon Cordier, J.C. Moreno, José Millan, Phillippe Godignon
Abstract: Channel mobility properties of SiC and GaN based MOSFETs and AlGaN/GaN HEMTs are compared in this paper. For a similar active area, the specific on-resistance of the MOSFET is much larger than the on-resistance for the HEMT, which is depending on the electron mobility in their respective channels. Physically-based models are used to fit this experimental transistor mobility.
1207
Authors: Y. Kobayashi, Shinsuke Harada, Hiroshi Ishimori, Shinji Takasu, Takahito Kojima, Keiko Ariyoshi, Mitsuru Sometani, Junji Senzaki, Manabu Takei, Yasunori Tanaka, Hajime Okumura
Abstract: A 3.3 kV trench MOSFET with double-trench structure was demonstrated. The deep buried p-base regions were fabricated using tilt angle ion implantation into the sidewalls of the trench contacts. The distance between the trench gate and trench contact was determined through simulation, in order to optimize the trade-off between on-resistance (RonA) and the electrical field in the oxide (Eox). A tapered trench was located in the connective area between the edge termination and the active area, in order to maintain breakdown voltage. We achieved a RonA of 10.3 mWcm2 and a breakdown voltage of 3843 V and the maximum Eox at breakdown voltage was estimated to be 3.2 MV/cm.
974
Authors: Zachary Stum, Vinayak Tilak, Peter A. Losee, Emad A. Andarawis, Cheng Po Chen
Abstract: MOSFET-based integrated circuits were fabricated on silicon carbide (SiC) substrates. SiC devices can operate at much higher temperatures than current semiconductor devices. Simple circuit components including operational amplifiers and common source amplifiers were fabricated and tested at room temperature and at 300°C. The common source amplifier displayed gain of 7.6 at room temperature and 6.8 at 300°C. The operational amplifier was tested for small signal open loop gain at 1kHz, measuring 60 dB at room temperature and 57 dB at 300°C. Stability testing was also performed at 300°C, showing very little drift at over 100 hours for the individual MOSFETs and the common source amplifier.
730
Showing 1 to 10 of 202 Paper Titles