Papers by Keyword: M/NEMS

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Authors: Zhi Yong Duan, Qiao Xia Gong, Hui Min Zhang, Er Jun Liang
Abstract: nanoimprint was developed quickly in decades because of its ultrahigh resolution, low cost, high throughput. It has demonstrated the ability to pattern 5 nm line-width and 12 inch wafer, and is one of the support technology in NGL. This paper reported a novel nanoimprint to improve the pressure uniformity with air cushion press. The chamber is sealed by a SiO2 window with an elastic ring membrane, on which the mold is fixed . Ultraviolet light solidify resist on the wafer through this window. When air in chamber bleeded the window falled and the mold is pressed into the resist. If air leading into the chamber again, the mold separate from substrate by the elastic ring membrane, then the patterns on mold are translated onto the substrate. Experiments exhibit that this nanoimprint system can replicate features with high fidelity over a large patterning area.
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Authors: Gwiy Sang Chung, Chang Min Ohn
Abstract: This paper describes magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC thin films grown on thermally oxidized Si substrates by atmospheric pressure chemical vapor deposition (APCVD). The best vertical structures were obtained by the addition of 40 % O2, 16 % Ar, and 44 % CHF3 reactive gas at 40 mTorr of chamber pressure. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. These results show that in a magnetron RIE system, it is possible to etch SiC with lower power than that of the commercial RIE system. Therefore, poly 3C-SiC etched by magnetron RIE has the potential to be applied to micro/nano electro mechanical systems (M/NEMS).
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Authors: Sheng Bo Sang, Chen Yang Xue, Wen Dong Zhang, Bin Zhen Zhang
Abstract: The stress is an important parameter of nano-thin film of the micro-structure. It is essential for the successful design and operation of many micro-machined devices. In this paper, the experiment idea that using Raman spectrometer to quantitate the stress in the nano-thin film of MEMS was put forward and the formula of the stress of Si and GaAs crystal was derived. In the experiment, the Si nano-thin film and AlAs/GaAs nano-thin film on GaAs substrate were grown by MBE (molecular beam epitaxy). The uniaxial pressure is exerted to nano-thin film by using the pressurization instrument designed by ourselves. Raman spectrums of the nano-thin film of MEMS are measured with the pressure exerted varying. Through the processing of the experiment data, the error of measurement to stress in nano-thin film is maximally 0.9% to Si and 7.5% to GaAs. So, Raman spectrum can be used to accurately quantitate stress in nano-thin film of MEMS in order to assessment of the reliability of micromachined structure. And the method can be applied to quantitate the stress in the experiment of testing the piezoresistor effect of double-quantum-well nano-thin film.
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