Papers by Keyword: Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

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Authors: Eiichi Okuno, Takeshi Endo, Jun Kawai, Toshio Sakakibara, Shoichi Onda

Abstract: We have investigated the techniques to improve the channel mobility of SiC MOSFETs and found that the hydrogen termination of dangling...

Authors: Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta, Hiroyuki Nagasawa

Abstract: A new technique that reduces stacking fault (SF) density in 3C-SiC, termed switch-back epitaxy (SBE), is demonstrated regarding its effects...

Authors: Masato Noborio, Jun Suda, Tsunenobu Kimoto

Abstract: SiC lateral double RESURF MOSFETs have been fabricated on the 4H-SiC (000-1)C face. By utilizing the C face, the channel resistance can be...

Authors: Anant K. Agarwal, Jeff B. Casady, L.B. Rowland, W.F. Valek, C.D. Brandt
Authors: Shinsuke Harada, Makoto Kato, Mitsuo Okamoto, Tsutomu Yatsuo, Kenji Fukuda, Kazuo Arai

Abstract: The channel mobility in the SiC MOSFET degrades on the rough surface of the p-well formed by ion implantation. Recently, we have developed...

Authors: Jim Richmond, Sei Hyung Ryu, Sumi Krishnaswami, Anant K. Agarwal, John W. Palmour, Bruce Geil, Dimos Katsis, Charles Scozzie

Abstract: This paper reports on a 400 watt boost converter using a SiC BJT and a SiC MOSFET as the switch and a 6 Amp and a 50 Amp SiC Schottky diode...

Authors: Qamar-ul Wahab, Hajime Kosugi, Hiroshi Yano, Christer Hallin, Tsunenobu Kimoto, Hiroyuki Matsunami
Authors: Toshiya Yokogawa, Kunimasa Takahashi, Osamu Kusumoto, Masao Uchida, Kenya Yamashita, Makoto Kitabatake
Authors: Seiji Suzuki, Shinsuke Harada, Tsutomu Yatsuo, Ryouji Kosugi, Junji Senzaki, Kenji Fukuda
Authors: Mitsuo Okamoto, Seiji Suzuki, Makoto Kato, Tsutomu Yatsuo, Kenji Fukuda

Abstract: We have fabricated lateral RESURF MOSFETs on 4H-SiC(0001) Si-face and (000-1) C-face substrates, and compared those properties. The channel...

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