Papers by Keyword: PN Diode

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Authors: N.I. Kuznetsov, D. Bauman, A. Gavrilin, Liliana Kassamakova, Roumen Kakanakov, G. Sarov, T. Cholakova, Konstantinos Zekentes, Ventzislav I. Dimitrov
Authors: Geun Ho Song, Hyoung Wook Kim, Wook Bahng, Sang Cheol Kim, Nam Kyun Kim
Authors: Michael Treu, Roland Rupp, Chee Siew Tai, Peter Blaschitz, Jochen Hilsenbeck, Helmut Brunner, Dethard Peters, Rudolf Elpelt, T. Reimann
Abstract: Today silicon carbide (SiC) Schottky diodes are mainly used in the power factor control (PFC) unit of high end switched mode power supplies, due to their outstanding switching performance compared to Si pn diodes. In the case of the PFC it is required that the diodes are capable of handling surge currents up to several times the current of normal operation. The paper shows the surge current capability of a merged pn Schottky diode where the p-areas are optimized as efficient emitters. During normal operation the diode is behaving like a normal Schottky diode whereas during surge current condition the diode is behaving like a pn diode. For a sine half wave of 10 ms we achieved a non repetitive peak forward current capability of about 3700 A/cm2 which is about ten times rated current (for comparison: destructive current density of a standard Schottky diode ~ 1650 A/cm²). Additionally the device shows a stable avalanche and is able to withstand a single shot avalanche of 9.5 3s and 12.5 mJ.
Authors: Yoshitaka Sugawara
Abstract: To achieve large current capability in spite of present small SiC devices that are limited by various crystal defects, focus was placed on SiC GTO thyristor and SICGT have been developed as an advanced SiC GTO. SICGTs with current capability of 1.6-100 A and blocking voltage of 3-12.7 kV and a 3 phase PWM SICGT inverter with output power of 35 kVA have been successfully developed. Furthermore, application of the SiC inverter aimed to a load leveling system was demonstrated.
Authors: Syunsuke Izumi, Isaho Kamata, Takeshi Tawara, Hiroyuki Fujisawa, Hidekazu Tsuchida
Authors: Takeshi Ohshima, Takahiro Satoh, Masakazu Oikawa, Shinobu Onoda, Toshio Hirao, Hisayoshi Itoh
Abstract: The charge generated in 6H-SiC n+p diodes by oxygen (O) ion irradiation at energies between 6 and 15 MeV was evaluated using the Transient Ion Beam Induced Current (TIBIC). The signal peak of the transient current increases, and the fall-time decreases with increasing applied reverse bias. The value of collected charge increases with increasing applied reverse bias, and the saturation of the collected charge was observed in high reverse bias regions (e.g. above 70 V in the case of 12MeV O-irradiation). The charge generated in the deeper region than the depletion layer is collected due to the "funneling effect". Almost all charge generated in n+p SiC diodes by O-irradiation between 6 and 15 MeV is collected when the length of the depletion layer becomes longer than the projection range of ions.
Authors: M.V.S. Chandrashekhar, Christopher I. Thomas, Hui Li, Michael G. Spencer, Amit Lal
Abstract: A betavoltaic cell in 4H SiC is demonstrated. An abrupt p-n diode structure was used to collect the charge from a 1mCi Ni-63 source. An open circuit voltage of 0.95V and a short circuit current density of 8.8 nA/cm2 were measured in a single p-n junction. An efficiency of 3.7% was obtained. A simple photovoltaic type model was used to explain the results. Good correspondence with the model was obtained. Fill factor and backscattering effects were included. Efficiency was limited by edge recombination and poor fill factor.
Authors: Yasunori Tanaka, Kazutoshi Kojima, Takaya Suzuki, T. Hayashi, Kenji Fukuda, Tsutomu Yatsuo, Kazuo Arai
Authors: Wook Bahng, Geun Ho Song, Hyoung Wook Kim, K.S. Seo, Nam Kyun Kim
Authors: Yasunori Tanaka, Takaya Ohno, Naoki Oyanagi, Shin Ichi Nishizawa, Takaya Suzuki, Kenji Fukuda, Tsutomu Yatsuo, Kazuo Arai
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