Papers by Keyword: Pattern Transfer

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Authors: John Papalia, Nathan Marchack, Robert Bruce, Hiroyuki Miyazoe, Sebastian Engelmann, Eric A. Joseph
Abstract: Over the course of the past few years, the semiconductor industry has continued to invent and innovate profoundly to adhere to Moore’s Law and Dennard scaling. At each of the technology nodes starting with 45nm, new materials and integration techniques, such as high-K & metal gates, double patterning techniques, and now 3D FinFet / Trigate device geometries are being introduced in order to maintain device performance. This places a large burden on unit process development to accommodate and deliver advanced process capability and is growing the need for the ultimate etch solution: etching with atomic layer precision. Atomic layer etching is a promising path to answer the processing demands of thin high mobility channel devices on the angstrom scale. Self-limiting reactions, discrete reaction & activation steps, or extremely low ion energy etch plasmas are some of the pathways being pursued for precise sub-nanometer material removal. In this invited paper, previously published in SPIE, the ability to achieve atomic layer etch precision is reviewed in detail for a variety of material sets and implementation methods. For a cyclic approach most similar to a reverse ALD scheme, the process window to achieve a truly self-limited atomic layer etch process is identified and the limitations as a function of controlling the adsorption step, the irradiation energy, and the reaction process are examined. Alternative approaches, including processes to enable pseudo-ALE precision, are then introduced and results from their application investigated. While these new plasma-enhanced atomic layer etch (PE-ALE) processes show encouraging results, most patterning applications are best realized by optimizations through discharge chemistry and/or plasma parameters. Significant improvements however were obtained when applying PE-ALE approaches to small pitch patterns. In particular the increased selectivity to OPL seems to offer a potential benefit for patterning high aspect ratio features.
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Authors: Xin Han, Juan Wang
Abstract: Biomimetic surface structures have profound influences on the development of many emerging devices and systems. In this study, a sequential approach involving hot embossing and polymer casting for transferring biological surface structures to thermoplastic polymers were investigated and developed. The surface structure on shark skins (Carcharhinus brachyurous) was used as a case study. A PMMA pattern was fabricated by directly hot embossing the biological surface of the skin. The resulting PMMA structure was used as a casting master for rapid feature transfer onto PDMS surfaces. The replicated surface patterns on the polymer were found to be comparable with those on the shark skin. The water tunnel test of the flatplate sample pieces suggests that the drag reduction efficiency of the biomimetic shark-skin surface achieves 8.25% in maximum and 6.91% in average, which validates that this forming technology can be applied to the direct pattern transfer of the firm creatural scarfskins onto thermoplastic polymers.
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Authors: Veeradasan Perumal, U. Hashim, Tijjani Adam
Abstract: In Micro/Nanowire fabrication, the alignment and exposure process are the most critical steps in photolithography process, and indeed for the whole biochip processing. This process determines the success of transferring the Micro/Nanowire design pattern on the mask to the photoresists on the wafer surface. Hence, the resolution requirementsand precise alignment are vital; each mask needs to be precisely aligned with original alignment mark in order to transfer the original pattern from mask onto photoresist layer. Otherwise, itcant successfully transfer the original pattern to the wafer surface causing device and circuit failure. Therefore, the UniMAPs Second Generation Mask Aligner is used for precise alignment and pattern transfer process. Thus, the paper present a preliminary study on fundamentals of resist exposure and development mechanisms for fabrication of Micro/Nanowire, We demonstrated significance of considering process parameters such as mask aligner, quality of resist, soft bake, exposure time and intensity, and development time. There was a very little room for alignment error; we were able to achieved error free design to the criticaldimension.
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Authors: R. Haarindra Prasad, U. Hashim, Tijjani Adam
Abstract: This paper mainly represent the simple and effective method to design the chrome mask for patterning the platform for zinc oxide nanowire growth. The most essential aspect that need to be considered in designing the chrome mask is the critical dimension of the mask. Hence, the mask is design by using AutoCAD software to design the desired size and length dimension of the mask. Fabrication and development of zinc oxide consist of a series of major steps. The silicon sample will be initially cleaned, followed by zinc oxide deposition and the zinc oxide nanowire will be growth in vertical direction by using VLS (Vapor-Liquid-Solid) mechanism. The nanowire will be patterned by using the chrome mask which design the platform of the nanowire formation. The initial design of the chrome mask is measured and compared to the fabricated chrome mask to detect the efficiency and the accuracy of the pattern transfer process. Our aim is to develop a comprehensive platform for prominent zinc oxide nanowire growth leading to novel and efficient functional of zinc oxide nanowire devices.
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Authors: Le Yan, Lei Yin, Hong Zhong Liu
Abstract: In this paper, a method of multistep imprint lithography process is described. Through comparing among the loading process factors, a multistep loading locus, which includes a pre-cure release of the pressing force, is proposed for the high-conformity transfer of nano-patterns from the template to the wafer. A series of imprint experiments show that the new multistep loading process can meet the needs for different pressing areas, feature sizes and repetitious imprints. This loading process can effectively reduce the residual resist thickness while maintaining a uniform residual resist and non-distorted transfer of nano-patterns to the resist-coated wafer. And a high-conformity of 100 nm feature can be achieved.
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