Papers by Keyword: Photoelectron Spectroscopy

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Authors: N. Sieber, Thomas Seyller, Lothar Ley, M. Polcik, D. James, J.D. Riley, R.C.G. Leckey
713
Authors: V.E. Puchin, J.D. Gale, A.L. Shluger, Eugene A. Kotomin, J. Günster, M. Brause, V. Kempter
633
Authors: Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Y. Takata, K. Kobayashi, S. Shin, H. Nohira, Takeshi Hattori
Abstract: Thermal oxide films on SiC epitaxial (000-1) C-faces have been characterized by angle-resolved photoemission spectroscopy (AR-PES). The structure of wet oxide/SiC C-face interface was compared with that of dry oxide/SiC C-face, as well as that of dry oxide/SiC Si-face, in order to clarify why a MOS device of SiC C-face achieved good electrical properties. The improvement in electrical properties was confirmed by AR-PES measurements, evidencing differences in binding energy between SiC and the Si4+ components in Si2p and valence band region, and in binding energy between SiC and the CHx components in C1s. The reason for the improvement in electrical property of MOS devices by use of SiC C-face are discussed in terms of depth profiles of oxide films calculated from the AR-PES results.
585
Authors: Thomas Seyller, Konstantin V. Emtsev, Florian Speck, Kun Yuan Gao, Lothar Ley
Abstract: We have studied the electronic structure of the interface between 6H-SiC{0001} and graphite. On n-type and p-type 6H-SiC(0001) we observe Schottky barriers of ÁSi b,n = 0.3±0.1 eV and ÁSi b,p = 2.7±0.1 eV, respectively. The observed barrier is face specific: on n-type 6H- SiC(0001) we find ÁC b,n = 1.3±0.1 eV. The impact of these barriers on the electrical properties of metal/SiC contacts is discussed.
701
Authors: B. Mattern, M. Bassler, Gerhard Pensl, Lothar Ley
375
Authors: Thomas Seyller
Abstract: Hydrogenation of SiC surfaces was carried out by annealing in ultra-pure hydrogen at temperatures of around 1000°C. The hydrogenated surfaces were studied using a variety of techniques and show exceptional properties which are discussed in the light of earlier studies of Si and SiC surfaces and interfaces.
535
Authors: P. Barta, P. Dannetun, S. Niziol, W.R. Salaneck, Malgorzata Zagorska, A. Pron
91
Authors: Konstantin V. Emtsev, Thomas Seyller, Florian Speck, Lothar Ley, P. Stojanov, J.D. Riley, R.C.G. Leckey
Abstract: Graphitization of the 6H-SiC(0001) surface as a function of annealing temperature has been studied by ARPES, high resolution XPS, and LEED. For the initial stage of graphitization – the 6√3 reconstructed surface – we observe σ-bands characteristic of graphitic sp2-bonded carbon. The π-bands are modified by the interaction with the substrate. C1s core level spectra indicate that this layer consists of two inequivalent types of carbon atoms. The next layer of graphite (graphene) formed on top of the 6√3 surface at TA=1250°C-1300°C has an unperturbed electronic structure. Annealing at higher temperatures results in the formation of a multilayer graphite film. It is shown that the atomic arrangement of the interface between graphite and the SiC(0001) surface is practically identical to that of the 6√3 reconstructed layer.
525
Authors: Thomas Seyller, Konstantin V. Emtsev, R. Graupner, Lothar Ley
1317
Authors: Motochika Okano, Daiki Edamoto, Kentaro Uchida, Ichiro Omura, Tomonori Ikari, Motoi Nakao, Masamichi Naitoh
Abstract: We investigated the effect of ion-beam irradiation of the 3C-SiC(111) surface on the growth of graphene by the SiC surface-decomposition method. When a 3C-SiC(111) surface was irradiated by 1 keV Ar+ ions at a dose of 4.5 × 1015 cm2 in an ultra-high-vacuum chamber and then annealed at 1200 °C for 1 min, the formation of graphene layers was promoted in comparison with that in the absence of ion-beam irradiation. X-ray photoelectron spectroscopy studies showed that Ar ion bombardment of the 3C-SiC(111) caused breakage of surface bonds and helped Si atoms to desorb from the surface.
1170
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