Papers by Keyword: PiN Diode

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Authors: Heu Vang, Christophe Raynaud, Pierre Brosselard, Mihai Lazar, Pierre Cremillieu, Jean Louis Leclercq, Sigo Scharnholz, Dominique Planson, Jean-Pierre Chante
Abstract: Silicon carbide devices limitations often originate from the quality of the substrate material. Therefore it is interesting to investigate devices fabricated on alternative source materials. Currently, CREE is the world market leader of SiC wafers. Nowadays, some new companies begin to propose alternative material. The European manufacturer SiCrystal furnishes now some epiwafers for the fabrication of 1,2kV devices. In this paper we present 4H-SiC 1.2 kV pin diodes with a JTE termination realized on a SiCrystal epiwafer. The devices exhibit a blocking voltage of 1.2 kV, a current density of 420 and a specific differential series resistance of 4.4 m-⋅cm2. The yield of fabricated diodes with a breakdown voltage greater 600 V is superior to 75%.
Authors: Arash Salemi, Hossein Elahipanah, Carl Mikael Zetterling, Mikael Östling
Abstract: Implantation-free mesa etched 10+ kV 4H-SiC PiN diodes are fabricated, measured and analyzed by device simulation. An area-optimized junction termination extension (O-JTE) is implemented in order to achieve a high breakdown voltage. The diodes design allows a high breakdown voltage of about 19.3 kV according to simulations by Sentaurus TCAD. No breakdown voltage is recorded up to 10 kV with a very low leakage current of 0.1 μA. The current spreading within the thick drift layer is considered and a voltage drop (VF) of 8.3 V and 11.4 V are measured at 50 A/cm2 and 100 A/cm2, respectively. The differential on-resistance (Diff. Ron) of 67.7 mΩ.cm2 and 55.7 mΩ.cm2 are measured at 50 A/cm2 and 100 A/cm2, respectively.
Authors: Megan Snook, Harold Hearne, Ty McNutt, Victor Veliadis, Bettina Nechay, Sharon Woodruff, R.S. Howell, David Giorgi, Joseph White, Stuart Davis
Abstract: To meet the large current handling requirements of modern power conditioning systems, paralleling of a large number of devices is required. This increases cost and complexity through dicing, soldering, and forming multiple wire bonds. Furthermore, paralleling discrete devices increases package volume/weight and reduces power density. To overcome these complexities, PiN diodes were designed, fabricated at high yields, tested, and interconnected on a three-inch 4H-SiC wafer to form an 11.72 cm2 wafer-scale diode. The wafer-scale diode exhibited a breakdown voltage of 1790 V at an extremely low leakage current density of less than 0.002 mA/cm2. Under pulsed conditions, the peak current through the wafer-scale diode is 64.3 kA with a forward voltage drop of 10.3 V. The dissipated energy was 382 J and the action exceeded 1.7 MA2-sec.
Authors: Dai Okamoto, Yasunori Tanaka, Tomonori Mizushima, Mitsuru Yoshikawa, Hiroyuki Fujisawa, Kensuke Takenaka, Shinsuke Harada, Shuji Ogata, Toshihiko Hayashi, Toru Izumi, Tetsuro Hemmi, Atsushi Tanaka, Koji Nakayama, Katsunori Asano, Kazushi Matsumoto, Naoyuki Ohse, Mina Ryo, Chiharu Ota, Kazuto Takao, Makoto Mizukami, Tomohisa Kato, Manabu Takei, Yoshiyuki Yonezawa, Kenji Fukuda, Hajime Okumura
Abstract: We successfully fabricated 13-kV, 20-A, 8 mm × 8 mm, drift-free 4H-SiC PiN diodes. The fabricated diodes exhibited breakdown voltages that exceeded 13 kV, a forward voltage drop of 4.9–5.3 V, and an on-resistance (RonAactive) of 12 mW·cm2. The blocking yield at 10 kV on a 3-in wafer exceeded 90%. We investigated failed devices using Candela defect maps and light-emission images and found that a few devices failed because of large defects on the chip. We also demonstrated that the fabricated diodes can be used in conducting high-voltage and high-current switching tests.
Authors: Lin Cheng, Anant K. Agarwal, Michael J. O'Loughlin, Craig Capell, Khiem Lam, Charlotte Jonas, Jim Richmond, Al Burk, John W. Palmour, Aderinto Ogunniyi, Heather O’Brien, Charles Scozzie
Abstract: In this work, we report our recently developed 16 kV, 1 cm2, 4H-SiC PiN diode results. The SiC PiN diode was built on a 120 µm, 2×1014/cm3 doped n-type SiC drift layer with a device active area of 0.5175 cm2. Forward conduction of the PiN diode was characterized at temperatures from 20°C to 200°C. At high injection-current density (JF) of 350 ~ 400 A/cm2, the differential on-resistance (RON,diff) of the SiC PiN diode decreased from 6.08 mΩ·cm2 at 20°C to 5.12 mΩ·cm2 at 200°C, resulting in a very small average temperature coefficient of –5.33 µΩ·cm2/°C, while the forward voltage drop (VF) at 100 A/cm2 reduced from 4.77 V at 20°C to 4.17 V at 200°C. This is due to an increasing high-level carrier lifetime with an increase in temperature, resulting in reduced forward voltage drop. We also observed lower RON,diff at higher injection-current densities, suggesting that a higher carrier lifetime is needed in this lightly doped n-type SiC thick epi-layer in order to achieve full conductivity modulation. The anode to cathode reverse blocking leakage current was measured as 0.9 µA at 16 kV at room temperature.
Authors: J. Wu, Leonid Fursin, Yu Zhu Li, Petre Alexandrov, Jian H. Zhao
Authors: Yuan Bu, Hiroyuki Yoshimoto, Kumiko Konishi, Akio Shima, Yasuhiro Shimamoto
Abstract: We designed, fabricated and evaluated 6.5 kV SiC PiN diodes. In order to suppress process-induced basal plane dislocation (BPD) in SiC PiN diodes, we improved the fabrication processes. The Ir-Vr measurements showed that the breakdown voltage was over 9 kV at room temperature (25 °C). The leakage currents (Ileak) at 6.5 kV are as low as 5.9×10-6 mA/cm2 (25 °C) and 9.7×10-5 mA/cm2 (150 °C). The maximum recovery loss among our switching test results was 6.7 mJ at 150 °C, 60 A. Moreover, the diodes fabricated on BPD-free area are very stable during applying 20 A current for 8~1000 h. Photoluminescence (PL) observation and KOH etching indicated that no BPD generated during improved fabrication processes.
Authors: Koji Nakayama, Yoshitaka Sugawara, Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Tomonori Nakamura, Katsunori Asano, R. Ishii
Abstract: The dependence of forward voltage degradation on crystal faces for 4H-SiC pin diodes has been investigated. The forward voltage degradation has been reduced by fabricating the diodes on the (000-1) C-face off-angled toward <11-20>. High-voltage 4H-SiC pin diodes on the (000-1) C-face with small forward voltage degradation have also been fabricated successfully. A high breakdown voltage of 4.6 kV and DVf of 0.04 V were achieved for a (000-1) C-face pin diode. A 8.3 kV blocking performance, which is the highest voltage in the use of (000-1) C-face, is also demonstrated in 4H-SiC pin diode.
Authors: Christian Hecht, Bernd Thomas, René A. Stein, Peter Friedrichs
Abstract: In this paper, we present results of epitaxial layer deposition for production needs using our hot-wall CVD multi-wafer system VP2000HW from Epigress with a capability of processing 7×3” or 6×100mm wafers per run in a new 100mm setup. Intra-wafer and wafer-to-wafer homogeneities of doping and thickness for full-loaded 6×100mm and 7×3” runs will be shown. Results on Schottky Barrier Diodes (SBD) processed in the multi-wafer system will be given. Furthermore, we show results for n- and p-type SiC homoepitaxial growth on 3”, 4° off-oriented substrates using a single-wafer hot-wall reactor VP508GFR from Epigress for the development of PiN-diodes with blocking voltages above 6.5 kV. Characteristics of n- and p-type epilayers and doping memory effects are discussed. 6.5 kV PiN-diodes were fabricated and electrically characterized. Results on reverse blocking behaviour, forward characteristics and drift stability will be presented.
Authors: Dethard Peters, Bernd Thomas, T. Duetemeyer, T. Hunger, R. Sommer
Abstract: The paper describes first results of 6.5 kV SiC PiN diode modules which are designed as neutral point valves for medium-voltage power inverters rated for 1000 A. The power module consists of 4 AlN DCB substrates soldered on an AlSiC base plate. Each DCB is equipped with 20 SiC PiN diodes operating in parallel. The total active area of all 80 diode chips is 5.68 cm². At the rated current of 2 x 500A the forward voltage drops from 4.1 V at room temperature to 3.9 V at an averaged junction temperature of 125°C. The switching experiments show a very low reverse recovery charge of about 30 µC only. The conduction loss is comparable to the corresponding 6.5 kV silicon diode whereas the dynamic loss is marginal with respect to the forward conduction loss if the switching frequency is held below 10 kHz.
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