Papers by Keyword: Poly 3C-SiC

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Authors: Gwiy Sang Chung, Chang Min Ohn
Abstract: This paper describes magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC thin films grown on thermally oxidized Si substrates by atmospheric pressure chemical vapor deposition (APCVD). The best vertical structures were obtained by the addition of 40 % O2, 16 % Ar, and 44 % CHF3 reactive gas at 40 mTorr of chamber pressure. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. These results show that in a magnetron RIE system, it is possible to etch SiC with lower power than that of the commercial RIE system. Therefore, poly 3C-SiC etched by magnetron RIE has the potential to be applied to micro/nano electro mechanical systems (M/NEMS).
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Authors: Gwiy Sang Chung, Ki Bong Han
Abstract: This paper presents the mechanical properties of 3C-SiC thin film according to 0, 7, and 10 % carrier gas (H2) concentrations using Nano-Indentation. When carrier gas (H2) concentration was 10 %, it has been proved that the mechanical properties, Young’s Modulus and Hardness, of 3C-SiC are the best of them. In the case of 10 % carrier gas (H2) concentration, Young’s Modulus and Hardness were obtained as 367 GPa and 36 GPa, respectively. When the surface roughness according to carrier gas (H2) concentrations was investigated by AFM (atomic force microscope), when carrier gas (H2) concentration was 10 %, the roughness of 3C-SiC thin was 9.92 nm, which is also the best of them. Therefore, in order to apply poly 3C-SiC thin films to MEMS applications, carrier gas (H2) concentration’s rate should increase to obtain better mechanical properties and surface roughness.
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Authors: Gwiy Sang Chung, Jun Ho Jeong
Abstract: This paper presents the Raman scattering characteristics of poly 3C-SiC thin films deposited on AlN buffer layer by atmospheric pressure chemical vapor deposition (APCVD) using hexamethyldisilane (MHDS) and carrier gases (Ar + H2). The Raman spectra of SiC films deposited on AlN layer of before and after annealings were investigated according to the growth temperature of 3C-SiC. Two strong Raman peaks, which means that poly 3C-SiC admixed with nanoparticle graphite, were measured in them. The biaxial stress of poly 3C-SiC/AlN was calculated as 896 MPa from the Raman shifts of 3C-SiC deposited at 1180 °C on AlN of after annealing.
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