Papers by Keyword: Poole-Frenkel Emission

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Authors: Makito Nakano, Akira Saito, Nobuyuki Wada
Abstract: The electrical degradation mechanisms of BaTiO3-based ceramics were investigated by measuring the dependence of leakage current on high electric fields. Before the degradation, the leakage current predominately obeyed Ohm’s law and Poole-Frenkel relation. As the degradation progressed, the Poole-Frenkel emission current increased. Moreover, the total current at the high electric fields also comprised Schottky emissions between cathodes and dielectric layers.
201
Authors: A. Hussain, P. Akhter, A.S. Bhatti
Abstract: Gold/Zinc Phthalocyanine/n-Si metal semiconductor contact with organic interfacial layer have been developed and characterized by Current–Voltage-Temperature (I-V-T) measurements, to study its junction and charge transport properties. The junction parameters, of diode ideality factor (n), barrier height (b) and series resistance (R¬S), of the device are found to shift with device temperature. The barrier height and the diode ideality factor are found to increase and the series resistance is found to decrease with increasing device temperature. The activation energy of the charge carriers is found to be 44 meV and the peak of interface state energy distribution curves is found to shift in terms of Ess-Ev value from 0.582 eV to 0.776 eV with increasing device temperature. The data analysis implies that the Fermi level of the organic interfacial layer shifts as function of device temperature by 100 meV in the device temperature range of 283K to 343K. In terms of dominant conduction mechanism, the I-V-T data analysis confirms the fit of data to the relationship log (IV4)  V1/2 for higher device temperatures and the Poole-Frenkel type is found to be the dominant conduction mechanism for the hybrid device.
372
Authors: Mitsuru Sometani, Dai Okamoto, Shinsuke Harada, Hitoshi Ishimori, Shinji Takasu, Tetsuo Hatakeyama, Manabu Takei, Yoshiyuki Yonezawa, Kenji Fukuda, Hajime Okumura
Abstract: The conduction mechanism of the leakage current in thermal oxide on 4H-SiC was identified. The carrier separation current-voltage method clarified that electrons are the dominant carriers of the leakage current. The temperature dependence of the currentvoltage characteristics indicated that the conduction mechanism of the leakage current involved not only Fowler-Nordheim tunneling (FN) but also Poole-Frenkel (PF) emission. The PF emission current due to the existence of defects in the oxide increased with temperature.
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Authors: Makito Nakano, Akira Saito, Nobuyuki Wada
Abstract: The factors causing a decrease in the resistivity of multilayer ceramic capacitors (MLCCs) with a decrease in the thickness of dielectric layers were examined by carrying out measurements and finite element method (FEM) simulations. The obtained electric field vs. current density plots (E–J characteristics) indicated that the local concentration of electric field increased with the decrease in the thickness of the dielectric layers. The investigation of the local concentration of electric field at the grain boundaries using an FEM showed that the decrease in resistivity was caused by the roughness of the interface between dielectric layers and inner electrodes and the presence of large grains in the dielectric layers.
277
Authors: Thierry Ouisse, H.P.D. Schenk, S. Karmann, Ute Kaiser
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