Papers by Keyword: Power Device

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Authors: Qing Chun Jon Zhang, Robert Callanan, Anant K. Agarwal, Albert A. Burk, Michael J. O'Loughlin, John W. Palmour, Charles Scozzie
Abstract: 4H-SiC Bipolar Junction Transistors (BJTs) and hybrid Darlington Transistors with 10 kV/10 A capability have been demonstrated for the first time. The SiC BJT (chip size: 0.75 cm2 with an active area of 0.336 cm2) conducts a collector current of 10 A (~ 30 A/cm2) with a forward voltage drop of 4.0 V (forced current gain βforced: 20) corresponding to a specific on-resistance of ~ 130 mΩ•cm2 at 25°C. The DC current gain, β, at a collector voltage of 15 V is measured to be 28 at a base current of 1 A. Both open emitter breakdown voltage (BVCBO) and open base breakdown voltage (BVCEO) of ~10 kV have been achieved. The 10 kV SiC Darlington transistor pair consists of a 10 A SiC BJT as the output device and a 1 A SiC BJT as the driver. The forward voltage drop of 4.5 V is measured at 10 A of collector current. The DC forced current gain at the collector voltage of 5.0 V was measured to be 440 at room temperature.
1025
Authors: Anant K. Agarwal, Jeff B. Casady, L.B. Rowland, W.F. Valek, C.D. Brandt
989
Authors: Anant K. Agarwal, Sei Hyung Ryu, Ranbir Singh, Olof Kordina, John W. Palmour
1387
Authors: Dominique Tournier, Peter Waind, Phillippe Godignon, L. Coulbeck, José Millan, Roger Bassett
Abstract: Due to the significant achievements in SiC bulk material growth and in SiC device processing technology, this semiconductor has received a great interest for power devices, particularly for SiC high-voltage Schottky barrier rectifiers. The main difference to ultra fast Si pin diodes lies in the absence of reverse recovery charge in SiC SBDs. This paper reports on 4.5kV-8A SiC Schottky diodes / Si-IGBT modules. The Schottky termination design and the fabrication process gives a manufacturing yield of 40% for large area devices on standard starting material. Modules have been successfully assembled, containing Si-IGBTs and 4.5kV-SiC Schottky diodes and characterized in both static and dynamic regimes. The forward dc characteristics of the modules show an on-resistance of 33mohm.cm2 @ room temperatue (RT) and a very low reverse leakage current density (JR < 10 5A/cm2 @ 3.5kV). An experimental breakdown voltage higher than 4.7kV has been measured in the air on polyimide passivated devices. This value corresponds to a junction termination efficiency of at least 80% according to the epitaxial properties. These SiC SBDs are well suited for high voltage, medium current, high frequency switching aerospace applications, matching perfectly as freewheeling diodes with Si IGBTs.
1163
Authors: A.V. Suvorov, Lori A. Lipkin, G.M. Johnson, Ranbir Singh, John W. Palmour
1275
Authors: Qing Chun Jon Zhang, Jim Richmond, Craig Capell, Anant K. Agarwal, John W. Palmour, Heather O'Brian, Charles Scozzie
Abstract: A novel power device configuration, the Bipolar Turn Off thyristor (BTO), was proposed and demonstrated in SiC. The BTO operates in anode switch configuration consisting of a 9 kV SiC p-type Gate Turn Off thyristor (GTO) and a 1600 V SiC n-type Bipolar Junction Transistor (BJT). Compared with SiC GTOs, several new features have been accomplished in the BTO: (1) A positive temperature coefficient of forward voltage drop, (2) Anode current saturation capability, and (3) A simple gate driver and fast switching speed.
1045
Authors: Jian H. Zhao, Larry X. Li, Kiyoshi Tone, Petre Alexandrov, M. Pan, M. Weiner
1223
Authors: J. Neil Merrett, David C. Sheridan, John R. Williams, Chin Che Tin, J.D. Cressler
623
Authors: Matteo Bosi, Claudio Ferrari, Daniel Nilsson, Peter J. Ward
Abstract: In this work we have studied the carbonization of 3C-SiC on misoriented Si substrates, using different thermal ramp rates and shapes. We observed that the heating rate (°C/sec) from carbonization temperature to film growth temperature plays a major role in controlling the void density. Moreover, void formation can be eliminated by the introduction of silane at different temperatures during the heating ramp. The studies were performed on a small research reactor and the results were successfully transferred to a production scale reactor, aimed to the production of 3C-SiC power devices manufactured on 100 and 150 mm Si substrates.
95
Authors: Christian Brylinski, Olivier Ménard, Nicolas Thierry-Jebali, Frédéric Cayrel, Daniel Alquier
Abstract: The main rectifier device structures for power electronics based on SiC and on GaN are compared and the main issues for each structure are evaluated in terms of performance and manufacturability. The driving volume markets for power electronics devices correspond to the systems working on 127, 240 and 400 V energy supply networks, setting the device voltage handling to 300, 600, and 1200V respectively. We have limited the scope hereafter to the 600 V typical target, for which SiC Schottky rectifiers are now commercially available from at least 3 sources. The key physical properties for any semiconductor material used as the active layer of a unipolar device for power electronics are the breakdown field and carriers mobility. The bulk values are very similar for SiC and GaN. Two main other key issues are related to quality of the ohmic and Schottky contacts. For the ohmic contacts, adequate solutions have been found for both SiC and GaN. Surprisingly, on hetero-epitaxial GaN layers on sapphire despite of the very high crystal defects density ( ≥ 109cm-2 ), the ideality factor of the best Schottky contacts seems very promising. On the other hand, improving this ideality factor and the reverse leakage current for Schottky contacts on GaN layers grown on silicon substrate remains a fierce challenge. For the SiC Schottky rectifiers, cost and availability of the SiC substrates appear as the main residual limiting factors today. For GaN based rectifiers, although engineering device prototypes have already been published [1], there are both basic issues to be validated regarding reverse leakage current and reliability, and also difficult manufacturing issues to be solved in relation with device reliability, directly resulting from the nature of the possible substrates: mainly sapphire and silicon.
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