Papers by Keyword: Schottky Parameters

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Authors: Oleg Korolkov, Natalja Sleptsuk, J. Ruut, Toomas Rang
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Authors: Oleg Korolkov, Natalja Sleptsuk, Toomas Rang, A. Syrkin, Vladimir Dmitriev
Abstract: For more authentic comparison of Schottky parameters between combined sputter (Ti/Ni/Au) and diffusion welded (DW) Al contact and direct DW Al contact to SiC the forward current-voltage characteristics were measured at the temperature range 293-473 K on full-packed 0.3 cm2 Schottky diodes. Surprising fact was discovered that the temperature behaviour of parameters remains of the same character for both kind of contacts but for the combined sputter- DW samples the values of parameters is much closer in magnitude to sputter contacts. Apparently, chemical treatment before the DW process preserves untouched the contact surface layer formed by annealing of initial sputter metallization of the chips (e.g. Ni2Si, Ti3SiC2), and this layer serves as barrier during diffusion welding. In the second part of the work we give the results on long-term reliability testing where through the SiC Schottky diode with the DW Al contacts during 300 hr has been passed constant forward stabilized current of 100 A/cm2 density. The primary and final values of Uf for DW Schottky contact have not changed during the test.
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