Papers by Keyword: Sublimation

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Authors: Y. Kawai, Tomohiko Maeda, Yoshihiro Nakamura, Yoji Sakurai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Masahiro Yoshimoto, Tomoaki Furusho, Hiroyuki Kinoshita, Hiromu Shiomi
Abstract: We demonstrate high-speed and high-quality 6H-SiC homoepitaxial growth on a 1°-off c-plane SiC substrate by a closed-space sublimation method. By optimizing the size of single-crystal source materials in the growth system, a high-quality 6H-SiC epilayer with an X-ray diffraction rocking curve (0006) full-width at the half maximum (FWHM) of 38 arcsec was obtained. We also carried out doping of nitrogen and boron during the growth of the SiC epilayer. A strong donor-acceptor pair (DAP) emission at a peak wavelength of 570 nm under excitation by a 395 nm nitride-based light-emitting diode (LED) was observed. The 6H-SiC with DAP emission is promising for use as a phosphor in a nitride-based LED, because high-quality nitride layers can be grown on the SiC substrates with small off-oriented angles.
263
Authors: Ludovic Charpentier, Francis Baillet, Didier Chaussende, Etienne Pernot, Michel Pons, Roland Madar
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Authors: S.Yu. Karpov, A.V. Kulik, M.S. Ramm, E.N. Mokhov, A.D. Roenkov, Yu.A. Vodakov, Yuri N. Makarov
779
Authors: Jung Doo Seo, Joon Ho An, Jung Gon Kim, Jung Kyu Kim, Myung Ok Kyun, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Kap Ryeol Ku
Abstract: SiC single crystal ingots were prepared onto different seed material using sublimation PVT techniques and then their crystal quality was systematically compared. In this study, the conventional SiC seed material and the new SiC seed material with an inserted SiC epitaxial layer on a seed surface were used as a seed for SiC bulk growth. The inserted epitaxial layer was grown by a sublimation epitaxy method called the CST with a low growth rate of 2μm/h. N-type 2”-SiC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels of below 1017/cm3 were determined from the absorption spectrum and Hall measurements. The slightly higher growth rate and carrier concentration were obtained in SiC single crystal ingot grown on new SiC seed materials with the inserted epitaxial layer on the seed surface, maintaining the high quality.
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Authors: Mikael Syväjärvi, V. Stanciu, M. Izadifard, W.M. Chen, I.A. Buyanova, P. Svedlindh, Rositza Yakimova
747
Authors: Worawut Kriangkrai, Satit Puttipipatkhachorn, Pornsak Sriamornsak, Srisagul Sungthongjeen
Abstract: To avoid unpredictable time to float due to variable pH of the gastric fluid in each subject, sublimation technique is the new interesting approach to prepare non-effervescent floating drug delivery system (FDDS). In this study, a floating matrix tablet using borneol as sublimable agent was developed. The system consists of drug, matrix-forming polymer and sublimable agent. The highly porous and low-density floating matrix tablet was obtained when borneol was sublimated. The floating matrix tablets immediately floated and maintained buoyancy over 8 h. The sublimation of borneol increased with increasing sublimation temperature and incubation time. Increasing amount of sublimable agent exhibited lower density of the floating tablet because of higher porous structure. The results demonstrated that boneol was one of good candidates to be used as sublimable agent for non-effervescent floating tablets. However, physical properties of the matrix floating tablets were needed to be concerned.
33
Authors: Makato Sasaki, Hiromu Shiomi, Shigehiro Nishino
267
Authors: Sashiro Ezaki, M. Saito, K. Ishino
155
Authors: Makato Sasaki, Y. Nishio, Shigehiro Nishino, Shinichi Nakashima, Hiroshi Harima
41
Authors: Philip Hens, Julian Müller, Günter Wagner, Rickard Liljedahl, Erdmann Spiecker, Mikael Syväjärvi
Abstract: In this paper we present a concept on the defect generation and annihilation during the homoepitaxial growth step of cubic silicon carbide by sublimation epitaxy on templates grown by chemical vapor deposition on silicon substrates. Several structural defects like stacking faults, twins and star defects show opposite evolution from the template layer into the sublimation grown material. While single planar defects tend to annihilate with increasing layer thickness, the defect clusters assigned to the star defects are enlarging. These issues contribute to a balance of how to achieve the best possible quality on thick layers.
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