Papers by Keyword: Sublimation Growth

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Authors: Philipp Schuh, Grazia Litrico, Francesco La Via, Marco Mauceri, Peter J. Wellmann
Abstract: We report on the growth of bulk 3C-SiC by sublimation on epitaxial seeding layers (3C-SiC/Si) from chemical vapor deposition. We have reached a materials thickness of 0.85 mm and an area of 10.5 cm2 which can be enlarged further. The high crystalline quality is characterized by the absence of secondary polytype inclusions and the absence double position grain boundaries.
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Authors: Naoki Oyanagi, Shin Ichi Nishizawa, Kazuo Arai
107
Authors: Thomas Anderson, Donovan L. Barrett, J. Chen, W.T. Elkington, Ejiro Emorhokpor, A. Gupta, C.J. Johnson, R.H. Hopkins, Charles Martin, Thomas Kerr, E. Semenas, Andrew E. Souzis, C.D. Tanner, Murugesu Yoganathan, Ilya Zwieback
75
Authors: Sergey I. Dorozhkin, Andrew O. Lebedev, Andrew Yu. Maximov, Yuri M. Tairov
1453
Authors: Norbert Schulze, Donovan L. Barrett, Michael Weidner, Gerhard Pensl
111
Authors: Tomohisa Kato, Tomonori Miura, Keisuke Wada, Eiji Hozomi, Hiroyoshi Taniguchi, Shin Ichi Nishizawa, Kazuo Arai
Abstract: In this study, we report defect analysis in 4H-SiC crystals of high nitrogen doping grown by sublimation method, and we discuss key points for defect restraint. The growth was performed in two kinds of growth directions; c-axis and a-axis. In the c-axis grown crystal with carrier density greater than 1×10-19cm-3, defect propagation was confirmed in the vertical direction for a growth direction affected by the doping by x-ray topography. This phenomenon was not observed in the a-axis grown crystals. In sublimation growth, the quantity of impurities tends to increase as growth rate decreases. Therefore, in the c-axis growth of doped 4H-SiC bulk crystals, we have to be careful so that dopant does not increase too much without intention in grown layers with lower growth rate, for example at the beginning and end of the growth.
239
Authors: Tomohisa Kato, Kazutoshi Kojima, Shin Ichi Nishizawa, Kazuo Arai
Abstract: We report defects study in 4H-SiC bulk crystals grown by sublimation method on micropipe filled seed crystals oriented (0001) on-axis. The seed crystals of 1~3 inch in diameter were prepared from the large 4H-SiC bulk crystals. Before the sublimation growth, micropipes of the seed crystals were filled with epilayers grown by micropipe filling technique of CVD method. We confirmed about 95% of micropipes perfectly disappeared in the grown crystal. The mechanism of the micropipe extinction was also defined by defect analysis.
315
Authors: Tomoaki Furusho, Satoru Ohshima, Shigehiro Nishino
975
Authors: Mikhail Anikin, Michel Pons, K. Chourou, O. Chaix-Pluchery, Jean Marie Bluet, V. Lauer, R. Pons
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Showing 1 to 10 of 59 Paper Titles