Papers by Keyword: Transconductance

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Authors: Seikoh Yoshida, Hirotatsu Ishii, Jiang Li
Authors: Masayuki Yamamoto, Yasunori Tanaka, Tsutomu Yatsuo, Koji Yano

Abstract: We investigate a cascode configuration of a normally-on SiC-Buried Gate Static Induction Transistor (SiC-BGSIT) and Si-MOSFET as an...

Authors: Y.Y. Gomeniuk, Y.V. Gomeniuk, A. Nazarov, P.K. Hurley, Karim Cherkaoui, Scott Monaghan, Per Erik Hellström, H.D.B. Gottlob, J. Schubert, J.M.J. Lopes

Abstract: The paper presents the results of electrical characterization of MOS capacitors and SOI MOSFETs with novel high-κ LaLuO3 dielectric as a...

Authors: K.H. Baik, Seung Joon Ahn, Chul Geun Park, Seung Young Lee, Seung Joon Ahn

Abstract: We investigated the characteristics of the HfO2 layer deposited by ALD method in MOSFET devices where the HfO2 film is incorporated as the...

Authors: Praneet Bhatnagar, Nicolas G. Wright, Alton B. Horsfall, Konstantin Vassilevski, C. Mark Johnson, Michael J. Uren, Keith P. Hilton, A.G. Munday, A.J. Hydes

Abstract: 4H-SiC depletion mode (normally-on) VJFETs were fabricated and characterised at temperatures up to 377 °C. The device current density at...

Authors: Danupat Duangmalai

Abstract: In this paper, arealizationcurrent controlled current conveyor transconductance amplifier (CCCCTA)is presented...

Authors: Akio Shima, Kikuo Watanabe, Toshiyuki Mine, Naoki Tega, Hirotaka Hamamura, Yasuhiro Shimamoto

Abstract: We investigated the effect of an Al2O3 insertion layer in the gate insulator to make Vth higher and to...

Authors: Victor Veliadis, Harold Hearne, Ty McNutt, Megan Snook, Paul Potyraj, Charles Scozzie

Abstract: High-voltage vertical-junction-field-effect-transistors (VJFETs) are typically designed normally-on to ensure low-resistance voltage-control...

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