Papers by Keyword: Virtual Substrate

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Authors: Carl E. Norman, N. Griffin, D.D. Arnone, D.J. Paul, M. Pepper, B. Gallas, J.M. Fernández
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Authors: Erich Kasper, Klara Lyutovich
Abstract: Strain adjustment is obtained by virtual substrates which are composed of a silicon substrate and a strain relaxed buffer. The basics of strain relaxation are explained and applied to the covalent bonded Si/Ge system which shows a large regime of metastability. A solution to ultrathin strain relaxed buffers is given by the injection of point defects which nucleate to dislocation loops in the interface. Principle and injection mechanism are shown.
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