Papers by Keyword: Wet Cleaning

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Authors: Günter Haas, Bipin Parekh, Jeremie Frankhauser, Benoît Viallet, Patrick Palka, Jérôme Bras
171
Authors: Francesca Milanesi, Francesco Pipia, Simona Spadoni, Salvo Grasso, Enrica Ravizza, Mario Pistoni, Mauro Alessandri
Abstract: The interest towards Copper RDL (Re-Distribution Layer) is due to some advantages related to this approach. First of all it is cheaper than conventional Damascene approach; moreover it allows thicknesses as high as 10µm or more whereas with Damascene architecture Cu thickness is limited to <5µm. Figure 1 introduces the architecture concept, which is based on a quite long ECD growth on a substrate with patterned PhotoResist.
119
Authors: Didier Lévy, Sébastien Petitdidier, H. Bernard, F. Guyader, C. Dezauzier, C. Pizzetti
27
Authors: Annamaria Votta, Francesco Pipia, Enrica Ravizza, Simona Spadoni, Silvia Rossini, Lucilla Brattico, Mauro Alessandri
Abstract: GST is an alloy composed by Ge, Sb, Te whose importance is increasing more and more in semiconductors manufacturing due to its usage in Phase Change Memories (PCM) architecture, as a charge storage element. As a consequence its integration in PCM architectures requires a deeper understanding of the effect that commonly used wet cleanings may have on the surface of the alloy.
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Authors: Katsuhiko Miya, Takuya Kishimoto, Akira Izumi
79
Authors: Sylvain Garaud, Rita Vos, Denis Shamiryan, Vasile Paraschiv, Paul W. Mertens, Jan Fransaer, Stefan De Gendt
87
Authors: Hiroshi Morita, Jun ichi Ida, T. Mizuniwa, Tadahiro Ohmi
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Authors: Mike S. Ameen, Aseem K. Srivastava, Ivan L. Berry
Abstract: We have investigated the use of Rs and SIMS measurements to quantify substrate erosion due to plasma ashing and subsequent wet cleaning in the creation of ultra-shallow junctions. The near-surface proximity of the implants makes them highly sensitive to various plasma and wet chemical processes. We also observed a dependency on the implant species, dose and energy that can be correlated to substrate damage incurred during implant.
129
Authors: Francesca Milanesi, Silvio Vendrame, Enrica Ravizza, Simona Spadoni, Francesco Pipia, Luisito Livellara
Abstract: In a typical Power Device on the 0.16μm node, the isolation module is one of the most critical steps. The trench to be filled in those devices is rather deep and needs a considerable amount of a suitable dielectric material. The choice of dielectric in the present paper is falling on the SubAtmosphericUndopedSilicaGlass (SAUSG oxide) [1].
36
Authors: M. Schmidt, Guy Vereecke, Rita Vos, Frank Holsteyns, M. Baeyens, Paul W. Mertens
147
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