Papers by Keyword: 2D Electron Gas

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Authors: L.M.R. Scolfaro, J.R. Leite, C.A.C. Mendonça, D. Beliaev, S.M. Shibli, E.C.F. da Silva, E.A. Meneses
Authors: S.S. Krishtopenko, V.I. Gavrilenko, M. Goiran
Abstract: We report on the study of exchange enhancement of g-factor in 2D electron gas in n-type narrow-gap semiconductor heterostructures that feature a strong nonparabolicity of electric subbands. We demonstrate that exchange g-factor enhancement not only shows maxima at odd values of Landau level filling factors but, due to subband nonparabolicity, persists at even filling factor values as well. The magnitude of the exchange enhancement, the amplitude and shape of the g-factor oscillations are governed by both the screening of electron-electron interaction and the Landau level width. The enhanced g-factor values calculated for 2D electron gas in InAs/AlSb quantum well heterostructures are compared with previous experimental magnetotransport data.
Authors: Alexander A. Lebedev
Abstract: In addition to possessing unique electrical properties, silicon carbide (SiC) can crystallize in different modifications (polytypes). Having the same chemical nature, SiC polytypes may significantly differ in their electrical parameters. In recent years, the world's interest in fabrication and study of heteropolytype structures based on silicon carbide has considerably increased. This paper considers studies concerned with fabrication of various types of heterostructures constituted by different SiC polytypes by sublimation epitaxy, and their electrical parameters. It is shown that heterostructures between SiC polytypes may have a better structural perfection than those constituted by semiconductors that differ in chemical nature. A conclusion is made that SiC-based heterostructures are promising for application in modern electronic devices.
Authors: Kotaro Hirose, Norimichi Chinone, Yasuo Cho
Abstract: AlGaN/GaN heterostructure was observed using scanning nonlinear dielectric microscopy, which can measure both carrier and polarization profile in AlGaN/GaN heterostructure. As a result, GaN spontaneous polarization and AlGaN polarization which was sum of spontaneous polarization and piezoelectric polarization were clearly distinguished. Moreover, two dimensional electron gas was observed at the AlGaN/GaN interface. These results show that scanning nonlinear dielectric microscopy is useful method for evaluation of two dimensional electron gas profile and polarization profile in AlGaN/GaN heterostructure.
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