Papers by Keyword: 6H-SiC

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Authors: E. Rauls, Z. Hajnal, Peter Deák, Thomas Frauenheim
365
Authors: Wei Zeng, Zhe Chuan Feng, Rui Sheng Zheng, Ling Yun Jang, Chee Wei Liu
Abstract: High-resolution synchrotron radiation X-ray absorption of Si K-edge have been employed to investigate 6H-, 4H- and 3C-SiC. Detailed analyses of the extended x-ray absorption fine structure are taken by using the IFEFFIT program, and significant results on the atomic bonding are obtained from these comparative studies. The x-ray absorption near-edge structures of the Si K-edge are investigated, and the electronic structure of 3C-, 4H- and 6H-SiC are studied. In order to investigate the angular dependence, the x-ray absorption near-edge spectra were operated at 55o and 90o of the angle between the surface and the X-ray direction.
573
Authors: Xiao An Fu, Amita Patil, Philip G. Neudeck, Glenn M. Beheim, Steven Garverick, Mehran Mehregany
Abstract: This paper reports fabrication and electrical characterization of 6H-SiC n-channel, depletion-mode, junction-field-effect transistors (JFETs) for use in high-temperature analog integrated circuits for sensing and control in propulsion, power systems, and geothermal exploration. Electrical characteristics of the resulting JFET devices have been measured across the wafer as a function of temperature, from room temperature to 450oC. The results indicate that the JFETs are suitable for high-gain amplifiers in high-temperature sensor signal processing circuits.
1099
Authors: Jue Wang, B.W. Williams, Shankar E. Madathil, M.M. Desouza
1359
Authors: Eiji Kurimoto, Hiroshi Harima, Tadao Toda, Minoru Sawada, Shinichi Nakashima, Motohiro Iwami
637
Authors: Eugene Y. Tupitsyn, Arul Arjunan, Robert T. Bondokov, Robert M. Kennedy, Tangali S. Sudarshan
Abstract: 4H-SiC crystals were grown using the seeded sublimation technique (modified Lely technique) in the temperature range of 1950-2200°C. The nucleation of 4H-SiC on 6HSiC has been optimized and 4H-SiC crystals of 1cm thickness were grown using 6H-SiC seeds. a-face and c-face wafers obtained from the grown boules were characterized by KOH etching, X-ray diffraction, and Raman scattering studies. Complete polytypic homogeneity of 4H SiC was obtained during growth and it was found that the 6H to 4H transition occurs in three ways: 1) without a transition layer, 2) with thick 6H-SiC layer growth, and 3) with traces of 3C SiC inclusions. The crown regions of the grown crystals exhibit an X-ray rocking curve width of 21 arcsecs.
21
Authors: Jae Seung Choi, Weon Seon Lee, Dong Hyun Shin, Hyung Gyoo Lee, Yeong Seuk Kim, Keun Hyung Park
1021
Authors: Tomohiro Aoyama, Yoshiyuki Hisada, Shinichi Mukainakano, Ayahiko Ichimiya
705
Authors: Kun Yuan Gao, Thomas Seyller, Konstantin V. Emtsev, Lothar Ley, Florin Ciobanu, Gerhard Pensl
Abstract: Atomic Layer Deposited Al2O3 films on hydrogen-terminated 6H-SiC(0001) were annealed in hydrogen atmosphere and characterized by admittance spectroscopy measurement and photoelectron spectroscopy (PES). The resultant density of interface trap (Dit) from admittance spectroscopy measurement is reduced near mid gap, but increases strongly towards the conduction band edge. Systematic PES measurements show that hydrogen annealing introduces Si4+ as a new component besides Si0 and Si+. Using different electron escape depths for photon electrons, depth profiling of Si in its different oxidation states was performed. The result indicates the formation of a top SiO2 layer and a rougher interfacial layer containing more Si+ and Si4+ which could be responsible for the strong increase of Dit just below the conduction band edge.
559
Authors: M.V.B. Pinheiro, Th. Lingner, F. Caudepon, Siegmund Greulich-Weber, Johann Martin Spaeth
517
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