Papers by Keyword: Absorbed Dose

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Authors: Nevena Zdjelarević, Ljubinko Timotijević, Radeta Marić, Koviljka Stanković, Miloš Vujisić
Abstract: Heavy ion irradiation on phase change memory cell was conducted using Monte Carlo simulations. Absorbed dose in the whole memory cell, as well as in its active layer was assessed. Phase change memory cell was modeled as a sandwiched structure of two TiW electrodes and ZnS-SiO2 films as insulators surrounding the active region. The most commonly used phase change material, Ge2Sb2Te5, was used as active layer of the cell. Ionization effects of heavy ion irradiation were investigated for various thicknesses of phase change layer and different ion energies.
Authors: B. Karagoz, O. Ozdemir, O. Karacasu, N. Baydogan, Huseyin Cimenoglu, E.S. Kayali, A.B. Tugrul, N. Altinsoy, S. Haciyakupoğlu, S. Kiziltas, M. Okka, Gülçin Albayrak, H. Sengel, F. Akmaz, A. Parlar
Abstract: The aim of this study is to investigate the structural changes of Al doped ZnO thin films with gamma transmission technique with Cs-137 gamma radioisotope source. Gamma transmittance and gamma absorption coefficient, (1/mm) were investigated with the increase Al (at.%) concentration. Hence it can be possible to assess the density for Al doped ZnO thin films.
Authors: L. Sepet, N. Baydogan, Huseyin Cimenoglu, E.S. Kayali, A.B. Tugrul, N. Altinsoy, Gülçin Albayrak, H. Sengel, F. Akmaz, A. Parlar
Abstract: The changes on energy band gap at induced ZnO nanocrystallite thin film have investigated with the increase of absorbed dose. Irradiated ZnO nanocrystallite thin film exhibiting different absorption edges could adjust the transmittance of energetic electromagnetic radiation. The variations on absorption edge due to energy band gap were controlled by the absorbed dose.
Authors: Ying Liang, Bin Fang, Fang Fang Lin, Xu Min Zhu
Abstract: Ag/rGO composites were synthesized under gamma irradiation using silver nitrate and graphene oxide (GO) as the starting materials. Comparing with traditional methods, gamma irradiation is a simple and “green” technique. In the irradiation system, silver ions were reduced to silver nanoparticles (AgNPs) by the electrons generated from the radiolysis of solvent. GO nanosheets provided reactive sites for the formation of AgNPs and acted as a colloidal surfactant preventing the aggregation of AgNPs. Meanwhile, GO were partially reduced to reduced graphene oxide (rGO). X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscope, transmission electron microscope, Raman spectra and UV-Vis absorption spectra were applied for the characterization of Ag/rGO composites. The results showed that the absorbed dose (3.1 kGy, 4.7 kGy, 9.4 kGy and 27.4 kGy) plays an important role in the size distribution of AgNPs and the reduction degree of GO nanosheetes. The Ag/rGO composites exhibit a broad absorption band at visible light due to the surface plasmon resonance of AgNPs. Because of the unique surface properties, Ag/rGO composites behave enhanced performance for the adsorption of organic dye from water.
Authors: Srboljub J. Stanković, M. Petrović, M. Kovačević, A. Vasić, P. Osmokrović, B. Lončar
Abstract: CdZnTe detectors have been employed in diagnostic X-ray spectroscopy. This paper presents the Monte Carlo calculation of X-ray deposited energy in a CdZnTe detector for different energies of photon beam. In incident photon direction, the distribution of absorbed dose as deposited energy in detector is determined. Based on the dependence of the detector response on the thickness and different Zn fractions, some conclusions about changes of the material characteristics could be drawn. Results of numerical simulation suggest that the CdZnTe detector could be suitable for X-ray low energy.
Authors: Ivan Knežević, Marija Obrenović, Zoran Rajović, Bratislav Iričanin, Predrag Osmokrović
Abstract: Radiation effects of ion beams in perovskite oxide memristors are analyzedand linked to absorbed dose values, calculated from simulations of ion transport. Several ion species were used in simulations, chosen to represent certain commonly encountered radiation environments. Results indicate that considerable formation of oxygen ion - oxygen vacancy pairs, as well as advent of displaced rare earth and alkaline atoms, is to be expected. Oxygen vacancies can lead to a decrease or increase of active layer resistance, depending on applied voltage polarity. The loss of vacancies from the device is bound to impair the performance of the memristor. Calculated absorbed dose values in the memristor for various incident ion beams are typically on the order of several kGy.
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