Papers by Keyword: Aluminum Nitride (AlN)

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Authors: Lin Zhu, Mayura Shanbhag, T. Paul Chow, Kenneth A. Jones, Matthew H. Ervin, Pankaj B. Shah, Michael A. Derenge, R.D. Vispute, T. Venkatesan, Anant K. Agarwal
Authors: B.S. Moon, S.H. Han, I.K. Hwang, Young Hee Cho, C.E. Chung
Authors: T. Mattila, Risto M. Nieminen
Authors: C. Troadec, R. Fillit, P. Goeuriot, P. Verdier, Y. Laurent, Jean Vicens, G. Boitier, Jean-Louis Chermant, B.L. Mordike
Authors: Yu.G. Gogotsi, Jean Desmaison, R.A. Andrievski, David J. Baxter, Martine Desmaison-Brut, Richard J. Fordham, G.V. Kalinnikov, Vladimir Lavrenko, A.D. Panasyuk, F. Porz, G. Richter, S. Schneider
Authors: Hui Hui Ren, Rong Wu, Ji Kang Jian, Chu Chen, Abduleziz Ablat
Abstract: Room-temperature ferromagnetism has been found in AlN grown by direct arc discharge method using the direct reaction of Al powder with N2 gas. The observed room-temperature ferromagnetism which arises from the aluminum vacancy is intrinsic properties in AlN. The results could rule out oxygen impurities as the main cause of magnetic origin in AlN. First-principles calculations reveal that spontaneous spin polarization creates with a 3.0 uB local moment for AlN and magnetic originate from the polarization of the unpaired 2p electrons of N surrounding the Al vacancy. The aluminum vacancy induced may be applicable to other Ш-V nitride semiconductors in turning their magnetism.
Authors: Sanchitha Fernando, Tang Min, Lynn Khine, Rahul Agarwal, Kia Hian Lau, Jeffrey B.W. Soon, Ming Lin Julius Tsai
Abstract: This paper presents a novel piezoelectric actuator design that achieves low curling due to residual film stress. The proposed actuator maintains the gap between the movable electrode and the fixed electrode nearly constant independent of the residual stress level, improving the reproducibility and reliability of piezoelectric devices. At 20V excitation, the actuator deflects more than 5 µm. The design also achieves a capacitor electrode around 6% of the total actuator area, which is 2.5 times greater than other reported designs. This paper demonstrates the novel actuator in a tunable capacitor, but the actuator may be used in many other applications, such as MEMS switches and micro-mirrors.
Authors: Hiroshi Amano, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
Abstract: The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patterned template are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivity control of p-type AlGaN, particularly the realization of a high hole concentration, is essential for realizing high-efficiency UV and DUV LEDs and LDs.
Authors: Hai Long Liang, Chun Peng Wang, Yan Li Huo, Chuan Qi Hu, Xiao Ting Huang, Jie Tang
Abstract: Highly dense AlN/CNT composite ceramics with 1-10% volume fractions of CNT were fabricated by spark plasma sintered (SPS) at 1400°C-1700°C. The results indicated that origination diameter of AlN had a great effect on microstructure and thermal conductivity. In details, for the system with AlN origination diameter of nanosized, the tubular structure of CNT has not been destructed, but when micro-sized AlN powder was adopted, the structure of CNT showed unstable at high temperature. Even though the degradation with incorporation of CNT into AlN, thermal conductivity of sintered AlN/CNT composites ceramics was evidently improved by adjusting content of additive Y2O3 and the sintering process. Both the real part and imaginary part of the composites of Ka-Band (26.540.0 GHz) increase with the increase of CNT content, in which the increase of imaginary part is more than that of real part, resulting in an increase of loss factor. The AlN/ CNT thermal conductivity composites with appropriate CNT content and sintering temperature possess good dielectric dissipation and thermal conductivity.
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