Papers by Keyword: Antireflection Coating

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Authors: Gee Keun Chang
Abstract: With new models of AM1 solar spectra and Si refractive indices in the wavelength range of 0.4  0.97  , effective absorption powers of Si solar cells coated with the single and double AR layers were theoretically calculated for the first time. The SiO2, Si3N4 and SiO2/Si3N4 easily obtainable in the standard Si process were used as the AR layers of Si solar cell. Optimum thicknesses showing the maximum absorption power for AR layers of SiO2, Si3N4 and SiO2/Si3N4 were as follows: d(SiO2)=10001, d(Si3N4)=7001 and d(SiO2/Si3N4) =500 1 /3001 . Effective absorption powers in the solar cells of SiO2-Si, Si3N4-Si and SiO2/Si3N4-Si were 520W/m2, 565W/m2 and 607W/m2 at AM1 in the optimum conditions of AR coating, respectively
1013
Authors: Chun Rong Xue, Yu Qin Gu, Ming Liang Deng
Abstract: Thin-film anti-reflecting coatings can greatly reduce the optical loss by making use of phase changes, and the reflectivity depends on the refractive index of materials. TiO2ZnS and Si3N4 coatings are suitable for using as single layer anti-reflecting coating on bare silicon surface, while the MgF2/ZnS and SiO2/TiO2 double-layer anti-reflecting coating result in a minimum reflectance lower than 0.5% over broad spectral regions, with an average reflectance of approximately 2.25% between 400 and 1100 nm on the non-textured Si substrate. The short circuit current of silicon solar cells has significant improvement after depositing anti-reflecting coatings, and it increases the efficiency of the Si solar cells.
33
Authors: Chun Rong Xue, Yu Qin Gu, Ming Liang Deng
Abstract: This work presents study of both the antireflection coatings on silicon solar cells and surface texture of silicon solar cell, with the aim to prepare high quality Si solar cells. Surface texturing, either in combination with an anti-reflection coating or by itself, can be used to minimize reflection, but the large reflection loss can be reduced significantly via a suitable anti-reflecting coatings. Significant improvement of the short circuit current after anti-reflecting coatings was observed. It is found that the currentvoltage characteristic with a double-layer anti-reflecting coatings is better than that with a single-layer anti-reflecting coatings. Depositing a multilayer on the textured surface reduces the large reflection loss significantly. The short circuit current of silicon solar cells has significant improvement after depositing anti-reflecting coatings on textured surface silicon, and it increases the efficiency of the Si solar cells.
52
Authors: Anatoly Druzhinin, Valery Yerokhov, Stepan Nichkalo, Yevhen Berezhanskyi
Abstract: The paper deals with obtaining of textured silicon surfaces by chemical etching. As a result of experiments based on the modification and optimization of obtaining a textured silicon, several methods of chemical texturing of the crystalline silicon surface were developed. It was shown that modified isotropic and anisotropic etching methods are applicable to create a microrelief on the surface of silicon substrate. These methods in addition to their high conversion efficiency can be used for both mono- and multicrystalline silicon which would ensure their industrial use.
89
Authors: Shao Ni Sun, Li Yang Xie, Yi Chen Zhang, Ying Huang
Abstract: The Ta2O5/SiO2 Multi-layer Antireflection Coating Is Prepared on K9 Glass by RF Magnetron Sputtering Technology in the Experiment. the Growth Parameters Are Changed to Get Multi-layer Antireflection Film with Good Optical Properties. in the Technical Research, the Influence of Various Growth Parameters, Including Working Pressure, Oxygen Content, Substrate Temperature, Etc., on the Optical Properties and Structures of the Coatings Are Studied. Optical Properties and Morphological Features such as Surface, Structure Are Investigated by UV-VIS Spectrophotometer and AFM, Respectively. the Detecting Results Further Verify the Important Influences of Proper Growth Parameters on Optical Properties of Antireflection Coating.
167
Authors: Kahina Ait-Hamouda, A. Ababou, N. Gabouze
Abstract: In this work, we report on the results of using a Diamond-Like Carbon / Porous Silicon (DLC/PS) double layer as antireflection coating to enhance the performance of multicrystalline silicon photovoltaic cells. DLC layers were obtained by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The properties of these layers were investigated in order to establish the optimum preparation conditions for solar cell applications. Then, thin films of combined porous silicon-DLC structure were fabricated for antireflection coating use. The spectral response of a solar cell based on multicrystalline silicon (mc-Si) coated with a PS layer, formed by electrochemical process was enhanced compared to a cell without porous silicon layer as emitter. Further improvements are obtained by a deposition of a thin DLC film. The results of the solar cell parameters before and after porous silicon formation and DLC coating are discussed.
179
Authors: Rachid Chaoui, Bedra Mahmoudi, Yasmine Si Ahmed
Abstract: Stain etching of silicon solar cells in HF-FeCl3-H2O solutions as a last step in the processing sequence is reported. The etching was carried out without protecting the screen printed contacts. Following optimization of the solution composition and using very short etching times to alleviate the contact degradation problem, the solar cell weighted reflectance (Rw) between 400 and 1100 nm could be reduced from 38.23% to 11.54%. For the best small area cell (~20 cm2), the PS antireflective layer led to a relative improvement of 62.74% in the short-circuit current density, the FF was enhanced by 5.5% absolute, the open-circuit voltage was increased by 1.2 mV and the cell conversion efficiency was raised by 4.1% absolute from 5.4% to 9.5%. The best large area cell (~78 cm2) shows the following changes after porous layer formation: a relative improvement of 45.43% in the short-circuit current density, an improvement in the FF of 7.4% absolute, an increase in the open-circuit voltage by 7.5 mV and an enhancement in the cell efficiency by 4.0% absolute from 6.2% to 10.2%. This method shows a great potential for the cost-effective reduction of reflectance losses in industrial silicon solar cell manufacturing.
1
Authors: Jeong Kim, Sang Wook Park, In Sik Moon, Moon Jae Lee, Dae Won Kim
Abstract: An Electrochemical etching was used to form the porous silicon (PS) layer on the surface of the crystalline silicon wafer. The PS layer, in this study, will act as an antireflection coating to reduce the reflection of the incident light into the solar cell. The etching solution (electrolyte) was prepared by mixing HF (50%) and ethanol which was introduced for efficient bubble elimination on the silicon surface during etching process. The anodization of the silicon surface was performed under a constant current (galvanostat mode of the power supply), and process parameters, such as current density and etching time, were carefully tuned to minimize the surface reflectance of the heavily-doped wafer with sheet resistance between 20-30 / .
987
Authors: Ruo Yu Chen, Jian Wu Wang, Hong Ning Wang, Wei Yao, Jing Zhong
Abstract: The porous SiO2/TiO2 bilayer antireflection coatings with self-cleaning capacity have been prepared by a sol-gel dip-coating method, the surfactant template, Pluronic F123 (PF123) was added to the sol as a pore generator. The performances of the coatings were analyzed with ultraviolet visible spectrophotometer (UV-Vis), scanning electron microscope (SEM) and atomic force microscopy (AFM). The self-cleaning function of coatings was evaluated by means of photocatalytic degradation of methyl orange in aqueous solution, and mechanical strength of the coatings has also been studied. The results indicate that the average transmittance of porous SiO2/TiO2 coating increases by 6% as compared to uncoated glass, the coating has a small particle size, a porous structure and a low roughness. After illuminated by ultraviolet light for 3 h, the 5 mg/L methyl orange can be degraded by 56.5%. In addition, the coating has an excellent mechanical strength.
2970
Authors: S. Kermadi, N. Agoudjil, Samira Sali, R. Tala-Ighil, M. Boumaour
Abstract: Application of thin films of SiO2 and TiO2 using the sol-gel process were utilized as antireflection coating on monocrystalline silicon wafers. The aim of this study is to validate this process as a procedure to prepare antireflective films for monocrystalline silicon by dip-coating. The coating was carried out by dip-coating process using tetraethoxysilane (TEOS) as precursor for SiO2 and titanium isopropoxide (TIPT) as precursor for TiO2. In order to study the influence of the thickness on the reflectance and the optical parameters, several coatings with different thickness were deposited onto silicon wafers. The refractive index and the thickness were adjusted by controlling the number of dipping. The refractive index increases from 2.10 up to 2.22 by increasing the film thickness from 36 to 137 nm. It was found that the sample coated with two layers exhibits a lower reflection (1.86 % at λ = 602 nm). This result was improved by a single sub-layer of SiO2 (36.75 nm) to reach 1.08 % at λ = 674 nm). Furthermore, the low values of the extinction coefficient (k) (approach to Zero at λ = 632.8 nm) indicate that TiO2 and SiO2 films deposited by sol-gel method can be used as ARC for Si solar cells.
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