Papers by Keyword: Carrier Removal Rate

Paper TitlePage

Authors: Alexander A. Lebedev, S.V. Belov, Marina G. Mynbaeva, Anatoly M. Strel'chuk, Elena V. Bogdanova, Yu.N. Makarov, A.S. Usikov, Sergey Kurin, I.S. Barash, Alexander D. Roenkov, Vitalii V. Kozlovski
Abstract: Schottky-barrier diodes with a diameter of ~10 μm are fabricated on n-GaN epitaxial films grown by hydride vapor-phase epitaxy (HVPE) on sapphire substrates. The changes in the parameters of the diodes under irradiation with 15 MeV protons are studied. The carrier rate was found to be 130-145 cm-1. The linear nature of the dependence N = F (D) (N is carrier concentration, and D, the irradiation dose) shows that compensation of the material is associated with transition of electrons from shallow donors to deep acceptor levels which are related to primary radiation defects.
Authors: Alexander A. Lebedev, Klavdia S. Davydovskaya, Anatoly M. Strel'chuk, Andrey N. Yakimenko, Vitalii V. Kozlovski
Abstract: The change in the current-voltage characteristics and in Nd-Na values in the base of 4H-SiC Schottky diodes and JBS diodes under irradiation with 0.9 MeV electrons and 15 MeV protons has been studied. The carrier removal rate for the diodes irradiated with electrons was 0.07-0.15 cm-1, and that in the case of protons, 50-70 cm-1. It was shown that the devices under study retain rectifying current-voltage characteristics up to electron doses of ~1017 cm-2. It was found that the radiation resistance of the SiC-based devices significantly exceeds that of silicon p-i-n-diodes with similar breakdown voltages. The simultaneous effect of high temperature and proton irradiation on the characteristics of 4H-SiC pn structures was examined.
Authors: Alexander A. Lebedev, Klavdia S. Davydovskaya, Vitalii V. Kozlovski, Oleg Korolkov, Natalja Sleptsuk, Jana Toompuu
Abstract: In this paper investigation of degradation 4H SiC Schottky diodes parameters after irradiation by electrons with an energy of 0.9 MeV was doine. It was determined the carrier removal rate (Vd), which amounted to 0.07 - 0.09 cm-1. It is shown that the investigated Schottky diodes retained rectifying current-voltage characteristics of up to doses ~ 1017 cm-2. It is concluded that the radiation resistance of SiC Schottky diodes is much greater than the radiation resistance of Si p-i-n diodes with the same breakdown voltages
Authors: Alexander A. Lebedev, Boris Ya. Ber, Gagik A. Oganesyan, Sergey V. Belov, Natalia. V. Seredova, Irina P. Nikitina, Sergey P. Lebedev, Lev V. Shakhov, Vitalii V. Kozlovski
Abstract: Effects of proton irradiation in n-3C-SiC grown by sublimation on a 4H-SiC substrate have been studied by the Hall effect and photoluminescence methods. It was found that the carrier removal rate (Vd) reaches a value of ~110 cm-1. The full compensation of samples with an initial concentration of (1-2) x 1018 cm -3 was estimated to occur at doses of about 6 x 1015 cm -2. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of so-called "defective" photoluminescence was observed in 3C-SiC.
Authors: Alexander A. Lebedev, Vitalii V. Kozlovski, Sergey V. Belov, Elena V. Bogdanova, Gagik A. Oganesyan
Abstract: Carrier removal rate (Vd) in p-6H-SiC in its irradiation with 8 MeV protons has been studied. p-6H-SiC samples were produced by sublimation in a vacuum. Vd was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that full compensation of samples with initial value of Na-Nd 1.5 x1018 cm-3 occurs at an irradiation dose of ~1.1 1016 cm-2. In this case, the carrier removal rate was ~130 cm-1
Authors: Alexander A. Lebedev, Vitalii V. Kozlovski, Nikita B. Strokan, D.V. Davydov, Alexander M. Ivanov, Anatoly M. Strel'chuk, Rositza Yakimova
Showing 1 to 6 of 6 Paper Titles