Papers by Keyword: Cascode

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Authors: Heinz Mitlehner, Peter Friedrichs, Rudolf Elpelt, Karl Otto Dohnke, Reinhold Schörner, Dietrich Stephani
1245
Authors: Ty McNutt, John Reichl, Harold Hearne, Victor Veliadis, Megan McCoy, Eric J. Stewart, Stephen Van Campen, Chris Clarke, Dave Bulgher, Dimos Katsis, Bruce Geil, Skip Scozzie
Abstract: This work utilizes silicon carbide (SiC) vertical JFETs in a cascode configuration to exploit the inherent advantages of SiC and demonstrate the device under application conditions. The all-SiC cascode circuit is made up of a low-voltage normally-off vertical JFET, and high-voltage normally on vertical JFET to form a normally-off cascode switch. In this work, a half-bridge inverter was developed with SiC cascode switches for DC to AC power conversion. The inverter uses high-side and a low-side cascode switches that are Pulse Width Modulated (PWM) from a 500 V bus to produce a 60 Hz sinusoid at the output. An inductor and a capacitor were used to filter the output, while a load resistor was used to model the steady-state current of a motor.
979
Authors: Xue Qing Li, Anup Bhalla, Petre Alexandrov
Abstract: This work investigates the short-circuit capability of SiC cascode by performing two-dimensional electro-thermal TCAD simulations. The effects of the threshold voltage of the SiC JFET on the cascode short-circuit withstand time are studied. A design trade-off between the JFET specific-on resistance and the cascode short-circuit withstand time is determined. The experimental results are also presented.
871
Authors: Jochen Hilsenbeck, Zhang Xi, Daniel Domes, Kathrin Rüschenschmidt, Michael Treu, Roland Rupp
Abstract: Starting with the production of Infineon´s first silicon carbide (SiC) Schottky diodes in 2001, a lot of progress was achieved during recent years. Currently, a 3rd generation of MPS (merged pn Schottky) diodes is commercially available combining tremendous improvements with respect to surge current capability and reduced thermal resistance. In this work we present the implementation of SiC switches in power modules and a comparison of these units with the corresponding Si-based power modules. Also the frequency dependence of the total losses of the 1200V configurations using Si-IGBTs or SiC-JFETs as active device is shown, indicating that modules solution with a state of the art SiC JFET outperforms all other options for switching frequencies of 20 kHz and beyond. Additionally a total loss vs. frequency study will be presented. Furthermore, it is show that the switching losses of JFET based modules can be further reduced by reducing the internal distributed gate resistivity.
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